RF3930D 10W GaN On SiC Power Amplifier Die
The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3930D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3930D is an unmatched 0.5um gate, GaN transistor die suitable for many applications with >42dBm saturated power, >70% saturated drain efficiency, and >19dB small signal gain at 2GHz.
技术特性 Features
- Broadband Operation DC to 4 GHz
- Advanced GaN HEMT Technology
- Packaged Small Signal Gain = 19 dB at 2 GHz
- 48V Typical Performance:
- Output Power: 16 W at P3dB
- Drain Efficiency: 70% at P3dB
- Large Signal Models Available
- Chip Dimensions: 0.96 mm x 1.19 mm x 0.10 mm
- Active Area Periphery: 2.2 mm
功能框图 Functional Block Diagram
订购信息 Ordering Information
- RF3930D 10W GaN on SIC Power Amplifier Die
|
技术指标
| Frequency Range (Min) (MHz): |
0 |
| Frequency Range (Max) (MHz): |
4000 |
| Gain (dB): |
19 |
| VSUPPLY (V): |
48 |
| ISUPPLY (mA): |
55 |
| Package: |
Die |
应用领域 Applications
- Commercial Wireless Infrastructure
- Cellular and WiMAX Infrastructure
- Civilian and Military Radar
- General Purpose Broadband Amplifiers
- Public Mobile Radios
- Industrial, Scientific and Medical
产品实物图
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订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| RF3930D |
1 EA |
1 EA |
Standard 1 Piece Bag Shipping From Broomfield |
1+ |
$56.10 |
| |
|
|
|
25+ |
$38.80 |
| |
|
|
|
100+ |
$30.50 |
