RFHA1101D 4.3W GaN on SiC Power Amplifier Die
The RFHA1101D is a 28V, 4.3W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFHA1101D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper heat sinking and assembly. The RFHA1101D is an unmatched 0.5μm gate, GaN transistor die suitable for many applications with >36dBm 3dB-compressed power, >60% 3dB-compressed drain efficiency, and >21dB small signal gain at 2GHz.
技术特性 Features
- Broadband Operation DC to 10GHz
- Advanced GaN HEMT Technology
- Small Signal Gain=21.4dB at 2.14GHz
- 28V Typical Performance
- Output Power 4.3W at P3dB
- Drain Efficiency 60% at P3dB
- Dimensions
- GaN die: 0.448 x 0.825 x 0.1mm
- GaN die on Heat Sink: 1.25 x 1.25 x 0.3mm
- Active Area Periphery: 2.22mm
功能框图 Functional Block Diagram
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技术指标
| Frequency Range (Min) (MHz): |
0 |
| Frequency Range (Max) (MHz): |
10000 |
| Gain (dB): |
21.4 |
| VSUPPLY (V): |
28 |
| ISUPPLY (mA): |
44.4 |
| Package: |
Die |
应用领域 Applications
- Commercial Wireless Infrastructure
- Cellular and WiMAX Infrastructure
- Civilian and Military Radar
- General Purpose Broadband Amplifiers
- Public Mobile Radios
- Industrial, Scientific and Medical
RFHA1101D 产品实物图
订购信息 Ordering Information
- RFHA1101D 4.3W GaN on SiC Power Amplifier Die
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订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| RFHA1101D |
1 EA |
1 EA |
Standard 1 Shipping From Broomfield |
1+ |
$50.50 |
| |
|
|
|
25+ |
$35.00 |
| |
|
|
|
100+ |
$27.50 |
