RFHA3942 4.3W GaN on SiC Power Amplifier Die
The RFHA3942 is a 48V, 35W high power discrete amplifier designed for military communications, radar, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/Medical applications. Using a second generation advanced high power density Gallium Nitride (GaN) semiconductor process with improved linearity, these high-performance amplifiers achieve high efficiency, excellent linearity, and flat gain and power over a broad frequency range in a single amplifier design. The RFHA3942 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished by incorporating simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.
技术特性 Features
RFHA3942 产品实物图
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技术指标
应用领域 Applications
功能框图 Functional Block Diagram
订购信息 Ordering Information
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| 应用技术支持与电子电路设计开发资源下载 | 大小(KB) | 版本信息 |
| RFHA3942 数据资料DataSheet下载：PDF | 157 | DS120418 |
