RFHA5966A X Band 10W High Power Amplifier GaAs MMIC

The RFHA5966A is a two stage, high efficiency, high performance X-Band Gallium Arsenide Monolithic Amplifier. It has a 41dBm PSAT at 9.5GHz and is well suited for a variety of X-Band Radar Applications. The device also has a PAE of 40% at 9.5GHz and has been designed for operation in 50Ω systems. The die is fabricated using RFMD’s 0.3mm pHEMT process and is suitable for eutectic attachment.

技术特性 Features
  • 20dB Gain
  • +41dBm Saturated Output Power
  • 40% Power Added Efficiency
  • 100% On Wafer DC and RF Testing
  • 100% Output Power Testing
功能框图 Functional Block Diagram

RFHA5966A 功能框图

技术指标
Frequency Range (Min) (MHz): 9000
Frequency Range (Max) (MHz): 10000
Gain (dB): 20
VSUPPLY (V): 9
应用领域 Applications
  • Civilian and Military Radar
  • Military Communications
  • General Purpose Broadband Amplifiers
  • Electronic Warfare
  • Public Mobile Radios
  • Commercial Wireless Infrastructure
  • Cellular and WiMAX Infrastructure
  • Industrial, Scientific, and Medical
订购信息 Ordering Information
  • RFHA5966A X Band 10W High Power Amplifier GaAs MMIC
  • RFHA5966AS2 2-Piece Sample Bag

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
RFHA5966A 数据资料DataSheet下载:PDF 709 DS111023