SPA2118Z 1W GaAs Amplifier_BDTIC 代理SPA2118Z

SPA2118Z 1W GaAs Amplifier

RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.

技术特性 Features

High Linearity Performance
+20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP
+47dBm Typ. OIP3
High Gain: 33dB Typ.
On-Chip Active Bias Control
Patented high Reliability GaAs HBT Technology
Surface-Mountable Plastic Package

SPA2118Z 产品实物图

功能框图 Functional Block Diagram

技术指标

Frequency Range (Min) (MHz):	810
Frequency Range (Max) (MHz):	960
Gain (dB):	33
NF (dB):	5
OP1dB (dBm):	29
OIP3 (dBm):	47
VSUPPLY (V):	5
ISUPPLY (mA):	400
Package:	SOIC-8

应用领域 Applications

IS-95 CDMA Systems
Multi-Carrier Applications
AMPS, ISM Applications

订购信息 Ordering Information

SPA2118Z 7” Reel with 500 pieces
SPA2118ZSQ Sample bag with 25 pieces
SPA2118ZSR 7” Reel with 100 pieces
SPA2118Z-EVB1 900MHz PCBA

应用技术支持与电子电路设计开发资源下载	大小(KB)	版本信息
SPA2118Z 数据资料DataSheet下载：PDF	600	DS120502