电压可变衰减器

PIN Diode and GaAs FET based Voltage Variable Attenuators (VVAs) have dynamic ranges as high as 35 dB with a single voltage control input. Our PIN diode VVAs also have outstanding IP3 performance while maintaining a low current drain.

0.7 - 3.0 GHz Plastic Packaged Voltage Variable Attenuators - PIN Diode-Based
Part Number Frequency
(GHz)
Min. VB
IR = 10 µA
(V)
CT
VR = 30 V
(pF)
Description Insertion Loss
at Min Control
(dB) Max.
Attenuation Range
at Max Control
(dB) Typ.
Input IP3
(dBm) Min.
Control
Input Range
VF
IF = 10 mA
(V)
RS
IF = 1 mA
F = 100 MHz (Ω)
RS
IF = 10 mA
F = 100 MHz (Ω)
RS
IF = 100 mA
F = 100 MHz (Ω)
Typical Carrier Lifetime
IF = 10 mA (ns)
Package
(mm)
AV101-12LF 0.7-1.0     HIP3™ Variable Attenuator 1.5 20 47 0-3.0 mA           SOIC 8L, 6 x 4.9x 1.6
AV102-12LF 1.7-2.0     HIP3™ Variable Attenuator 1.5 20 47 0-3.0 mA           SOIC 8L, 6 x 4.9x 1.6
AV111-12LF 0.8-1.0     HIP3™ Variable Attenuator 1.5 25 37 0-1.4 mA           SOIC 8L, 6 x 4.9x 1.6
AV113-12LF 2.1-2.3     HIP3™ Variable Attenuator 1.6 22 37 0-1.5 mA           SOIC 8L, 6 x 4.9x 1.6
SMP1302 Series   200 0.30 Max.           0.80 Typ. 20 Max. 3 Max. 1.5 Max. 700  
SMP1304 Series   200 0.30 Max.           0.80 Typ. 50 Max. 7 Max. 2.0 Max. 1000  
SMP1307 Series   200 0.30 Max.           0.85 Typ. 100 Max. 15 Max. 3.0 Max. 1500  
DC-6 GHz Plastic Packaged Voltage Variable Attenuators - FET-Based
Part Number Frequency
(GHz)
Description Typ. Insertion
Loss Range
(dB)
Attenuation
Range
(dB)
IP3 > 0.5 GHz
(dBm) Typ.
Package
(mm)
SKY12146-321LF 3.0-3.8 20 dB Single CTL 1.5-1.6 32-20 20 QFN 12L, 3 x 3 x 0.75