The ’ABT125 quadruple bus buffer gates feature independent line drivers with 3-state outputs. Each output is disabled when the associated output-enable (OE)\ input is high.
These devices are fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the devices when they are powered down. The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver
SN54ABT125 | SN74ABT125 | |
Voltage Nodes(V) | 5 | 5 |
Vcc range(V) | 4.5 to 5.5 | 4.5 to 5.5 |
Logic | True | True |
Input Level | TTL | TTL |
Output Level | TTL | TTL |
Output Drive(mA) | -32/64 | |
No. of Gates | 4 | |
No. of Outputs | 4 | 4 |
tpd max(ns) | 4.9 | |
Static Current | 30 mA | |
Rating | Military | Catalog |
Technology Family | ABT | ABT |
器件 | 状态 | 温度 | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
SN54ABT125D | ACTIVE | 0 to 70 | 0.60 | 1ku | SOIC (D) | 14 | 50 | TUBE | ABT125 |
SN54ABT125DE4 | ACTIVE | 0 to 70 | 0.60 | 1ku | SOIC (D) | 14 | 50 | TUBE | ABT125 |
SN54ABT125DG4 | ACTIVE | 0 to 70 | 0.60 | 1ku | SOIC (D) | 14 | 50 | TUBE | ABT125 |
器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
SN54ABT125D | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN54ABT125D | SN54ABT125D |
SN54ABT125DE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN54ABT125DE4 | SN54ABT125DE4 |
SN54ABT125DG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN54ABT125DG4 | SN54ABT125DG4 |