技术特性

• 22 dB nominal gain @ 30 GHz
• 30 dBm nominal Pout @ P1dB
• 25% PAE @ P1dB
• -10 dB nominal return loss
• Built-in power detector
• 0.25-um mmW pHEMT 3MI
• Bias conditions: Vd = 4 - 6 V, Idq = 420 mA
• Chip dimensions: 2.44 x 1.15 x 0.1 mm (0.096 x 0.045 x 0.004 in)

应用领域 APPLICATION

• LMDS
• Point-to-Multipoint Radio
• Point-to-Point Radio
• Satellite Ground Terminals

技术指标

订购信息 Ordering Information

• TGA4509

机械图样Mechanical Drawing