华邦存储器_BDTIC 代理Winbond 华邦Mamory存储器

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DRAM 动态随机存储器
SDR SDRAM
DDR SDRAM
Mobile手机 RAM 随机存取存贮器;
Pseudo SRAM (PSRAM)
低功耗 SDR SDRAM
低功耗 DDR SDRAM
Flash存储器
并行Parallel Flash存储器
串行Serial Flash存储器
EPROM可擦可编程只读存储器

Winbond 华邦存储器Mamory SDR SDRAM 动态随机存储器
16M	Organization		Speed Grade			Voltage	Package	Availability
W981616CH	1Mx16	2 Banks	-6/ -7	166 MHz/143 MHz	CL3	3.3 V	TSOP II 50 (400 mil )	Mass Production
W9816G6CH	1Mx16	2 Banks	-6/-7	166 MHz/143 MHz	CL3	3.3 V	TSOP II 50 (400 mil ), Pb-free	Mass Production
W9816G6CB	1Mx16	2 Banks	-7	143 MHz	CL3	3.3 V	TSOP II 50 (400 mil ), Pb-free	Mass Production

64M	Organization		Speed Grade			Voltage	Package	Availability
W986416EH	4Mx16	4 Banks	-6/ -7	166 MHz/143 MHz	CL3	3.3 V	TSOP II 54 (400 mil)	Mass Production
W9864G6EH	4Mx16	4 Banks	-6/ -7	166 MHz/143 MHz	CL3	3.3 V	TSOP II 54 (400 mil), Pb-free	Mass Production
W986432EH	2Mx32	4 Banks	-6 /-7	166 MHz/143 MHz	CL3	3.3 V	TSOP II 86 (400 mil)	Mass Production
W9864G2EH	2Mx32	4 Banks	-6/ -7	166 MHz/143 MHz	CL3	3.3 V	TSOP II 86 (400 mil), Pb-free	Mass Production
W9864G6EB	4Mx16	4 Banks	-7	143 MHz	CL3	3.3 V	60 Ball VFBGA, Pb-free	Mass Production
W9864G6GH	4Mx16	4 Banks	-6/ -7	166 MHz/143 MHz	CL3	3.3 V	TSOP II 54 (400 mil), Pb-free	Q2/06
W9864G2GH	2Mx32	4 Banks	-6/ -7	166 MHz/143 MHz	CL3	3.3 V	TSOP II 54 (400 mil), Pb-free	Q2/06
W9864G6GB	4Mx16	4 Banks	-7	143 MHz	CL3	3.3 V	60 Ball VFBGA, Pb-free	Q3/06

128M	Organization		Speed Grade			Voltage	Package	Availability
W981216DH	8Mx16	4 Banks	-75	133 MHz	CL2/CL3	3.3 V	TSOP II 54 (400 mil)	Mass Production
W9812G6DH	8Mx16	4 Banks	-6 -7 -75	166 MHz 143 MHz 133 MHz	CL2/CL3	3.3 V	TSOP II 54 (400 mil), Pb-free	Mass Production
W9812G2DH	4Mx32	4 Banks	-6 -7 -75	166 MHz 143 MHz 133 MHz	CL2/CL3	3.3 V	TSOP II 86 (400 mil), Pb-free	Mass Production
W9812G2DB	4Mx32	4 Banks	-75	133 MHz	CL2/CL3	3.3 V	90 Ball TFBGA, Pb-free	Mass Production
W9812G6GH	8Mx16	4 Banks	-6 -7 -75	166 MHz 143 MHz 133 MHz	CL2/CL3	3.3 V	TSOP II 54 (400 mil), Pb-free	Q2/06
W9812G2GH	4Mx32	4 Banks	-6 -7 -75	166 MHz 143 MHz 133 MHz	CL2/CL3	3.3 V	TSOP II 86 (400 mil), Pb-free	Q2/06
W9812G2GB	4Mx32	4 Banks	-75	133 MHz	CL2/CL3	3.3 V	90 Ball TFBGA, Pb-free	Q3/06

256M	Organization		Speed Grade			Voltage	Package	Availability
W982516CH	16Mx16	4 Banks	-7 -75	143 MHz 133 MHz	CL2/CL3 CL3	3.3 V	TSOP II 54 (400 mil)	Mass Production
W9825G6CH	16Mx16	4 Banks	-7 -75	143 MHz 133 MHz	CL2/CL3 CL3	3.3 V	TSOP II 54 (400 mil), Pb-free	Mass Production
W9825G6CB	16Mx16	4 Banks	-75	133 MHz	CL3	3.3 V	90 Ball VFBGA, Pb-free	Mass Production
W9825G6DH	16Mx16	4 Banks	-7 -75	143 MHz 133 MHz	CL2/CL3 CL3	3.3 V	TSOP II 54 (400 mil), Pb-free	Q3/06
W9825G2DB	16Mx16	4 Banks	-75	133 MHz	CL3	3.3 V	90 Ball VFBGA, Pb-free	Q3/06

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Winbond 华邦存储器Mamory DDR SRAM 动态随机存储器
128Mb	Organization		Speed Grade			Voltage	Package	Availability
W9412G6CH	8Mx16	4 Banks	-5 -6 -75	200 MHz 166 MHz 133 MHz	CL2/ CL2.5/ CL3	2.5 V	TSOP II 66 (400 mil ), Pb-free	Q2/06
W9412G2CB	4Mx32	4 Banks	-5 -6 -75	200 MHz 166 MHz 133 MHz	CL2/ CL2.5/ CL3	2.5 V	144 Balls LFBGA, Pb-free	Q3/06

256Mb	Organization		Speed Grade			Voltage	Package	Availability
W9425G6CH	16Mx16	4 Banks	-5 -6 -75	200 MHz 166 MHz 133 MHz	CL2/ CL2.5/ CL3	2.5 V	TSOP II 66 (400 mil ),Pb-free	Q2/06
W9425G6DH	16Mx16	4 Banks	-5 -6 -75	200 MHz 166 MHz 133 MHz	CL2.5/ CL3	2.5 V	TSOP II 66 (400 mil ),Pb-free	Q3/06

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Winbond 华邦存储器Mamory Mobile手机 RAM Pseudo SRAM (PSRAM 随机存取存贮器)
32M Part No.	Organization	Speed Grade		Voltage	Package	Datasheet Revision	Availability
W965L6B-GW	2M x 16	65ns	Async	3.0V	KGD	by request	M ass P roduction
W965A6C-GW	2M x 16	70ns	Async/Page	3.0V	KGD	by request	Q1/06
W965A6D-GW	2M x 16	70ns	Async/Page	3.0V	KGD	by request	Q1/06

64M Part No.	Organization	Speed Grade		Voltage	Package	Datasheet Revision	Availability
W966A6B-GW	4 M x 16	83MHZ	S ync Burst/Page	3.0V	KGD	by request	M ass P roduction
W966D6B -GW	4 M x 16	77MHZ	Sync Burst/Page	1.8 V	KGD	by request	Mass Production
W966A6C-GW	4M x 16	77ns	Sync/Page	3.0V	KGD	by request	Q1/06

128M Part No.	Organization	Speed Grade		Voltage	Package	Datasheet Revision	Availability
W967C6A-GW	8M x 16	77MHZ	Async/Page/Burst	3.0V	KGD	by request	Mass Production
W967A6AA-GW	8M x 16	70ns	Async/Page	3.0V	KGD	by request	Mass Production
W967D6D-GW	8M x 16	133MHZ	Async/Page/Burst	1.8V	KGD	by request	Q3/06

256M Part No.	Organization	Speed Grade		Voltage	Package	Datasheet Revision	Availability
W968D6B-GW	16M x 16	133MHZ	Async/Page/Burst	1.8V	KGD	by request	Q2/06
W968D2B-GW	8M x 32	133MHZ	Async/Page/Burst	1.8V	KGD	by request	Q3/06

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Winbond 华邦存储器Mamory Mobile手机低功耗 SDR SDRAM存储器
256M Part No.	Organization		Speed Grade			Voltage	Package	Datasheet Revision	Availability
W988D6E-GW	16Mx16	4Banks	-75	133 MHz	CL3/2	1.8V	KGD	by request	Phase in Q3/06
W988D2E-GW	8Mx32	4Banks	-75	133 MHz	CL3/2	1.8V	KGD	by request	Phase in Q3/06
W988D2EBG75E	8Mx32	4Banks	-75	133 MHz	CL3/2	1.8V	8*13 90 Ball BGA,Pb-Free	by request	Phase in Q3/06

518M Part No.	Organization		Speed Grade			Voltage	Package	Datasheet Revision	Availability
W989D2A-GW	16Mx32	4Banks	-75	133 MHz	CL3/2	1.8V	KGD	by request	Phase in Q3/06
W989D6A-GW	32Mx16	4Banks	-75	133 MHz	CL3/2	1.8V	KGD	by request	Phase in Q3/06
W989D6A-GW	64Mx8	4Banks	-75	133 MHz	CL3/2	1.8V	KGD	by request	Phase in Q3/06

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Winbond 华邦存储器Mamory Mobile手机低功耗 DDR SDRAM存储器
256M Part No.	Organization		Speed Grand			Voltage	Package	Datasheet Revision	Availability
W948D6E-GW	16Mx16	4Banks	-75	133 MHz	CL3/2	1.8 V	KGD	by request	Q3/06

512M Part No.	Organization		Speed Grand			Voltage	Package	Datasheet Revision	Availability
W949D6A-GW	32Mx16	4Banks	-75	133 MHz	CL3/2	1.8 V	KGD	by request	Q3/06
W949D2A-GW	16Mx32	4Banks	-75	133 MHz	CL3/2	1.8 V	KGD	by request	Q3/06
W949D8A-GW	64Mx8	4Banks	-75	133 MHz	CL3/2	1.8 V	KGD	by request	Q3/06

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Winbond 华邦存储器Mamory Flash存储器并行Parallel Flash 闪存器
小容量Flash	容量	电压	结构	封装	技术资料版本	Availability
W29C512A	512K	5V	64K x8	PLCC 32,TSOP 32	A3 2005年4月	M/P
W29EE512	512K	5V	64K x8	PLCC 32, TSOP 32 Pb-free PLCC 32	A9 2005年4月	M/P
W29C011A	1M	5V	128K X8	DIP 32, SOP 32 PLCC 32	A4 2005年4月	M/P
W29EE011	1M	5V	128K X8	PLCC 32, TSOP 32 DIP 32 Pb-free PLCC 32	A17 2005年4月	M/P
W29C020C	2M	5V	256K x 8	DIP 32, PLCC 32, TSOP 32	A7 2006年11月	EOL
W29C040	4M	5V	512K x 8	DIP32 PLCC 32, TSOP 32,	A10 2005年4月	EOL
W39L512	512K	3.3V	64K x 8	PLCC 32, STSOP 32	A4 2006年9月	M/P
W39F010	1M	5V	128K x 8	DIP 32, PLCC 32, TSOP 32, STSOP 32	A4 2006年1月	M/P
W39L010	1M	5V	128K x 8	PLCC 32, STSOP 32	A5 2005年4月	M/P
W39L040	4M	3.3V	512K x 8	PLCC 32, TSOP 32, STSOP 32	A6 2005年4月	-
W39L040A	4M	3.3V	512K x 8	PLCC 32, STSOP 32	A3 2005年4月	M/P

FWH/LPC	容量	电压	结构	封装	Remark	技术资料版本	Availability
W39V040A*	4M	3.3V	512K x 8	PLCC32, STSOP32	LPC	A5 2005年4月	M/P
W39V040FA*				PLCC 32, STSOP 32 TSOP 40	FWH	A5 2005年4月	M/P
W39V040B*				PLCC 32, STSOP 32	LPC	A3 2005年4月	M/P
W39V040FB*				PLCC 32, STSOP 32	FWH	A3 2005年4月	M/P
W39V040C*				PLCC 32, STSOP 32	LPC	A1 2006年4月	Q2/06
W39V040FC*				PLCC 32, STSOP 32	FWH	A1 2006年4月	Q2/06
W39V080FA	8M	3.3V	1M x 8	PLCC 32, STSOP 32	FWH	A3 2005年4月	M/P
W39V080A	8M	3.3V	1M x 8	PLCC 32, STSOP 32	LPC	A3 2006年1月	M/P

高容量Flash	容量	电压	结构	封装	Remark	技术资料版本	Availability
W19B320A	32M	3V	4M x 8/ 2M x 16	TSOP 48, TFBGA 48	Flexible Bank	A3 2006年1月	M/P

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Winbond 华邦存储器Mamory 串行 Serial Flash 闪存器
型号	容量	电压	结构	封装	Availability
W25P10	1M	3.0 / 3.3V	Uniform 64KB Sectors 512 Pages of 256B/page	8-pin SOIC 150mil	M/P
W25X10	1M	3.0 / 3.3V	Uniform 4KB Sectors75 MHz, Dual-Output Read	8-pin SOIC 150mil	M/P
W25P20	2M	3.0 / 3.3V	Uniform 64KB Sectors 1024 Pages of 256B/page	8-pin SOIC 150mil	M/P
W25X20	2M	3.0 / 3.3V	Uniform 4KB Sectors 75 MHz, Dual-Output Read	8-pin SOIC 150mil	M/P
W25P40	4M	3.0 / 3.3V	Uniform 64KB Sectors 2048 Pages of 256B/page	8-pin SOIC 150mil	M/P
W25X40	4M	3.0 / 3.3V	Uniform 4KB Sectors 75 MHz, Dual-Output Read	8-pin SOIC 150mil & 208mil 8-pin DIP 300mil ,WSON 6x5mm	M/P
W25B40	4M	3.0 / 3.3V	Boot Block 4K to 64KB Sectors 2048 Pages of 256B/page	8-pin SOIC 150mil	M/P
W25P80	8M	3.0 / 3.3V	Uniform 64KB Sectors 4096 Pages of 256B/page	8-pin SOIC 208mil	M/P
W25X80	8M	3.0 / 3.3V	Uniform 4KB Sectors 75 MHz, Dual-Output Read	8-pin SOIC 150mil & 208mil 8-pin DIP 300mil ,WSON 6x5mm	M/P
W25P16	16M	3.0 / 3.3V	Uniform 64KB Sectors 8192 Pages of 256B/page	8-pin SOIC 208mil / 16-pin SOIC 300mil	M/P
W25X16	16M	3.0 / 3.3V	Uniform 4KB Sectors 75 MHz, Dual-Output Read	8-pin SOIC 208mil / 16-pin SOIC 300mil	Q4 2006
W25X32	32M	3.0 / 3.3V	Uniform 4KB Sectors 75 MHz, Dual-Output Read	8-pin SOIC 208mil / 16-pin SOIC 300mil	Q4 2006

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Winbond 华邦存储器Mamory EPROM 可擦可编程只读存储器
型号	容量	电压	结构	封装	技术资料版本	Availability
W27E512	512K	5V	64K X 8	DIP 28, PLCC 32	A10 2003年12月	M/P
W27C512*		5V	64K X 8	DIP 28, PLCC 32	A6 2006年1月	M/P
W27E520		5V/3.3V	64K X 8	SOP 20, TSSOP 20	A2 2000年9月	M/P
W27L520				SOP 20, TSSOP 20	A5 2001年7月	M/P
W27C520				SOP 20, TSSOP 20	A2 2002年5月	M/P
W27E01	1M	5V	128K X 8	DIP 32, PLCC 32, STSOP 32	A1 2002年5月	M/P
W27C01		5V	128K X 8	PLCC 32, STSOP 32, DIP 32	A2 2002年4月	M/P
W27L01		3.3V	128K X 8	TSOP 32, PLCC 32, STSOP 32	A3 2003年2月	M/P
W27E02	2M	5V	256K X 8	DIP 32, PLCC 32, STSOP 32	A1 2002年5月	M/P
W27C02		5V	256K X 8	DIP 32, PLCC 32, STSOP 32	A2 2002年4月	M/P
W27L02		3.3V	256K X 8	PLCC 32, STSOP 32	A3 2003年2月	M/P
W27E040	4M	5V	512K X 8	DIP 32, PLCC 32	A3 2003年12月	M/P

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