CYPT14B116-1X11M

CYPT14B116-1X11M
合格汽车
密度 (Kb)16384
频率 (MHz)
最高工作温度 (°C)0
Max. Operating VCCQ (V)3.60
最高工作电压 (V)3.60
最低工作温度 (°C)0
Min. Operating VCCQ (V)2.70
最低工作电压 (V)2.70
组织 (X x Y)2Mb x 8
速率 (ns)0
温度分类
封装与供应信息 Packaging/Ordering
Package Cross Section Drawing 下载
Package CarrierBulk
Package Carrier Drawing / Orientation 封装定向
Standard Pack Quantity1
Minimum Order Quantity (MOQ)1
Order Increment1
Estimated Lead Time (days)42
HTS Code8542.32.0040
ECCN(A.2.C)
ECCN Suball3A001
品质与环保 Quality and RoHS
Moisture Sensitivity Level (MSL)
Peak Reflow Temp. (°C)260 ()   Cypress Reflow Profile
符合有害物质限制 (RoHS) 标准N   Print RoHS Certificate of Compliance
无铅
Lead/Ball Finish
Marking   Cypress Marking Format
应用笔记 (13)
文件标题 下载
AN96592 - Migrating from Everspin’s 4-Mbit SPI MRAM (MR2xH40) to Cypress’s 4-Mbit SPI F-RAM (CY15B104Q)
AN55663 - Migrating from CY14E256L/STK14C88 to CY14E256LA
AN55661 - Migrating from CY14B256L/STK14D88 to CY14B256LA
AN43380 - HSB Operation in nvSRAMs
AN15979 - Soft Errors in nvSRAM
AN55659 - Migrating from CY14B101L/STK14CA8 to CY14B101LA
AN53313 - Real Time Clock Calibration in Cypress nvSRAM
AN55662 - Migrating from STK14C88-3 to CY14B256LA
AN6022 - A Comparison between nvSRAMs and BBSRAMs
AN6068 - Replacing 4-Mbit (256K x 16) MRAM with Cypress nvSRAM
AN91206 - Designing with Cypress ONFI 1.0 nvSRAM
AN61546 - Nonvolatile Static Random Access Memory (nvSRAM) Real Time Clock (RTC) Design Guidelines and Best Practices
AN43593 - Storage Capacitor (VCAP) Options for Cypress nvSRAM