2N7002DWA：N 通道 31V - 99V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 5V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N7002DWA | 2N7002DWA.pdf | - | Yes | Yes | N+N | Yes | 60 | 20 | 0.2 | - | 0.3 | - | 6000 | 8000 | - | - | 2.5 | 22 | 25 | 0.87 | - | 0.43 |
Description
This new generation 60V P-Channel enhancement mode MOSFET has been designed to minimise RDS(ON) and yet maintain superior switching performance. This device is ideally suited to handheld application.
Application
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems and Solid-State Relays
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc
SOT363
- 2N7002DWA.pdf 2N7002DWA
