DMN3070SSN：N 通道 30V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) | QG Typ @ VGS = 5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN3070SSN | DMN3070SSN.pdf | - | Yes | Yes | N | No | 30 | 20 | 5.1 | - | 0.78 | - | 40 | 50 | 80 | - | 2.1 | 0 | - | - | 67 | - |
Description
This new generation 30V N-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.
Application
- Load Switch
- DC-DC Converters
- Power Management Functions
订购型号
- DMN3070SSN-7
SC59
- DMN3070SSN.pdf DMN3070SSN
