DMN3110S：N 通道 30V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) | QG Typ @ VGS = 5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN3110S | DMN3110S.pdf | DMN3110S | Yes | Yes | N | No | 30 | 20 | 5.5 | - | 0.74 | - | 80 | 110 | - | - | 2.3 | - | - | - | - | - |
Description
This new generation 30V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application,
Application
- General Purpose Interfacing Switch
- Power Management Functions
- Boost Application
- Analog Switch
订购型号
- DMN3110S-7
SOT23
- DMN3110S.pdf DMN3110S
