DMT3011LDT：N 通道 30V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) | QG Typ @ VGS = 5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMT3011LDT | DMT3011LDT.pdf | DMT3011LDT | No | No | N+N | No | 30 | +20 -16 | - | 21.5 28.9 | - | 13.9 | 11.1 20 | 13.8 32 | - | - | 3 | 641 748 | 15 | 13.2 13.8 | 6 6.4 | - |
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Application
- Mobile Computing
- Point of Load
Features
- 0.6mm Profile – Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low Gate Threshold Voltage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
订购型号
- DMT3011LDT-7
V-DFN3030-8
- DMT3011LDT.pdf DMT3011LDT
