ZXGD3006E6Q：门驱动晶体管
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | VIN & VCC Max (V) | ISOURCE@ IIN = 10mA (A) | ISINK @IIN = -10mA (A) | IPK Max (A) | IIN Max (A) | SwitchingTimes Typ (td (rise)) (ns) | SwitchingTimes Typ (tr) (ns) | SwitchingTimes Typ (td (fall)) (ns) | SwitchingTimes Typ (tf) (ns) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZXGD3006E6Q | ZXGD3006E6.pdf | ZXGD3006E6Q | Yes | Yes | 40 | 4 @ IIN = 1mA | 3.8 @ IIN = -1mA | 10 | 0.1 | 9.5 | 14.5 | 6 | 14 |
Description
ZXGD3006E6 is a 40V Gate Driver for switching IGBTs and SiC MOSFETs. It can transfer up to 10A peak source/sink current into the gate for effective charging and discharging of a large capacitive load.
The ZXGD3006E6 can drive typically 4A into the low gate impedance of an IGBT, with just 1mA input from a controller. Also, the turn-on and turn-off switching behavior of the IGBT can be individually tailored to suit an application. In particular, by defining the switching characteristics appropriately, EMI and cross conduction problems can be reduced.
Application
- Solar inverters
- Power supplies
- Plasma display panel power modules
- DC-DC converters in electric cars
订购型号
- ZXGD3006E6QTA
SOT26
- ZXGD3006E6.pdf ZXGD3006E6Q
- ZXTP2006E6 ZXTP2006E6
- ZXTP2006E6 ZXTP2006E6
