The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state.
The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS20MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
Key Features
- 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
- Dose Rate Survivability: >1 x 1012 RAD (Si)/s
- Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55oC to +125oC
- Significant Power Reduction Compared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V
- LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
- Input Current Levels Ii ≤ 5µA at VOL, VOH
Order Information| Part Number | Package Type | Weight(g) | Pins | MSL Rating | Peak Temp (°C) | RoHS Status |
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| HCTS20KMSR | 14 Ld CFP | 0.6 | 14 | N/A | NA | RoHS |
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