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The HIP1020 applies a linear voltage ramp to the gates of any combination of 3.3V, 5V, and 12V MOSFETs. The internal charge pump doubles a 12V bias or triples a 5V bias to deliver the high-side drive capability required when using more cost-effective N-Channel MOSFETs. The 5V/ms ramp rate is controlled internally and is the proper value to turn on most devices within the Device-Bay-specified di/dt limit. If a slower rate is required, the internally-determined ramp rate can be over ridden using an optional external capacitor.

When VCC = 12V, the charge pump ramps the voltage on HGATE from zero to 22V in about 4ms. This allows either a standard or a logic-level MOSFET to become fully enhanced when used as a high-side switch for 12V power control. The voltage on LGATE ramps from zero to 16V allowing the simultaneous control of 3.3V and/or 5V MOSFETs.

When VCC = 5V, the charge pump enters voltage-tripler mode. The voltage on HGATE ramps from zero to 12.5V in about 3ms while LGATE ramps to 12.0V. This mode is ideal for control of high-side MOSFET switches used in 3.3V and 5V power switching when 12V bias is not available.

Key Features

• Rise Time Controlled to Device-Bay Specifications
• No Additional Components Required
• Internal Charge Pump Drives N-Channel MOSFETs
• Drives any Combination of One, Two or Three Outputs
• Internally-Controlled Turn-On Ramp
  • Optional Capacitor Selects Slower Rates
• Prevents False Turn on During Hot Insertion
• Operates using 12V or 5V Bias
• Improves Device Bay Peripheral Size Cost and Complexity
  • Minimal Component Count
  • Tiny 5-Pin SOT23 Package
• Controls Standard and Logic-Level MOSFETs
• Compatible with TTL and 3.3V Logic Devices
• Shutdown Current <1µA
• Operating Current <3mA

Applications

• Device Bay Peripherals
• Hot Plug Control
• Power Distribution Control