The radiation hardened IS-2100ARH, IS-2100AEH are high frequency, 130V half bridge N-Channel MOSFET driver ICs, which are functionally similar to industry standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol.
In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).
Key Features
- Electrically screened to DLA SMD # 5962-99536
- QML qualified per MIL-PRF-38535 requirements
- Radiation environment
- Maximum total dose: 300krad(Si)
- DI RSG process provides latch-up immunity
- SEU rating: 82MeV/mg/cm2
- Vertical device architecture reduces sensitivity to low dose rates
- Bootstrap supply maximum voltage to 150V
- Drives 1000pF load at 1MHz with rise and fall times of 30ns (typical)
- 1.5A (typical) peak output current
- Independent inputs for non-half bridge topologies
- Low DC power consumption: 60mW (typical)
- Operates with VDD = VCC over 12V to 20V range
- Low-side supply undervoltage protection
Applications
- High frequency switch-mode power supplies
- Drivers for inductive loads
- DC motor drivers
Order Information| Part Number | Package Type | Weight(g) | Pins | MSL Rating | Peak Temp (°C) | RoHS Status |
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| IS9-2100AEH-Q | 16 Ld CFP | 0.59 | 16 | N/A | NA | RoHS |
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| IS0-2100AEH-Q | Not Applicable - Contact Us | | | N/A | | RoHS |
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