The LTC1157 dual 3.3V micropower MOSFET gate driver makes it possible to switch either supply or ground reference loads through a low R DS(ON) Nchannel switch (N-channel switches are required at 3.3V because P-channel MOSFETS do not have guaranteed R DS(ON) with VGS = 3.3V). The LTC1157 internal charge pump boosts the gate drive voltage 5.4V above the positive rail (8.7V above ground), fully enhancing a logic level N-channel switch for 3.3V high-side applications and a standard N-channel switch for 3.3V low-side applications. The gate drive voltage at 5V is typically 8.8V above supply (13.8V above ground), so standard N-channel MOSFET switches can be used for both high-side and low-side applications. Micropower operation, with 3µA standby current and 80µA operating current, makes the LTC1157 well suited for battery-powered applications. The LTC1157 is available in both 8-pin DIP and SOIC.
器件型号 | 封装 | 温度 | 价格 (以 1 ~ 99 片为批量) | 价格 (以 1000 片为批量) * |
---|---|---|---|---|
LTC1157CN8#PBF | N-8 | C | $3.00 | $2.45 |
LTC1157CS8#PBF | SO-8 | C | $3.15 | $2.55 |
LTC1157CS8#TRPBF | SO-8 | C | $2.61 |