AFT09MS031N: 764-941 MHz,31 W,13.6 V LDMOS宽带射频功率晶体管

特性
  • 运行频率在764至941 MHz之间
  • 未匹配的输入和输出,可适用更宽的频率范围
  • 集成的ESD保护
  • 集成的稳定性增强功能
  • 宽带 - 整个频段全功率(764至870 MHz)
  • 可耐225°C高温的塑料封装
  • 卓越的热性能
  • 高线性度:TETRA、SSB和LTE
  • 高性价比的超模压塑料封装
  • 符合RoHS规范
  • 采用盘卷包装。R1后缀 = 500个,24 mm卷带宽度,13英寸卷盘。
  • 这些产品包含在我们的产品长期供货计划中,自推出后至少保证15年供货。
特性
  • 输出级800 MHz集群移动无线电
  • 输出级900 MHz集群移动无线电
TO-270-2, TO-270G-2 Gull Package Image
数据手册 (1)
名称/描述Modified Date
AFT09MS031NR1, AFT09MS031GNR1 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet (REV 1) PDF (1.0 MB) AFT09MS031N [English]31 Aug 2012
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
简介 (1)
名称/描述Modified Date
RFLANDMBFS: RF Mobile Radio Solutions - Fact Sheet (REV 2) PDF (364.6 kB) RFLANDMBFS [English]20 Mar 2014
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP [English]24 Sep 2015
封装信息 (2)
名称/描述Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D [English]30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]26 Feb 2016
支持信息 (1)
名称/描述Modified Date
New Generation of Land Mobile Radio Products (REV 0) PDF (877.8 kB) LANDMOBILE_TRN_SI [English]15 Jun 2012
印刷电路板
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFT09MS031NR1Active1.894113.6, 12.544.93131 @ CW1-Tone17.2 @ 870710.63UnmatchedABLDMOS
AFT09MS031GNR1Active1.894113.6, 12.544.93131 @ CW1-Tone17.2 @ 870710.63UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 REELActiveAFT09MS031NR1AFT09MS031NR1.pdf3260
TO-270-2 GULL98ASA99301DMPQ - 500 REELPOQ - 500 REELActiveAFT09MS031GNR1AFT09MS031GNR1.pdf3260
AFT09MS031NR1, AFT09MS031GNR1 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet aft09ms031n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RFLANDMBFS: RF Mobile Radio Solutions - Fact Sheet mrf1570n
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
New Generation of Land Mobile Radio Products aft09ms031n
AFT09MS031N 870 MHz Narrowband PCB DXF file AFT09MS031N
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
AFT09MS031NR1.pdf AFT09MS031N
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n
AFT09MS031GNR1.pdf AFT09MS031N