BLF7G15LS-300P:功率LDMOS晶体管

300 W LDMOS功率晶体管,适合1450 MHz至1550 MHz频率范围的基站应用。

特性和优势
    • 针对低内存占用量设计,提供出色的预失真性能
    • 低Rth,提供极佳的热稳定性
    • 高效率
    • 内部匹配,便于使用
    • 集成式ESD保护
    • 设计用于宽带操作(1450 MHz至1550 MHz)
    • 更低的输出电容,可增强Doherty应用中的性能
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适合W-CDMA基站和多载波应用的RF功率放大器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range14501550MHz
PL(1dB)nominal output power at 1 dB gain compression300W
Gppower gainPL(AV) = 85 W; VDS = 28 V [0]1718dB
RLininput return lossPL(AV) = 85 W; VDS = 28 V; IDq = 2600 mA [0]-7-6dB
ηDdrain efficiencyPL(AV) = 85 W; VDS = 28 V; 1476 MHz < f < 1511 MHz; IDq = 2600 mA [0]2831%
PL(AV)average output power[0]85W
ACPRadjacent channel power ratioPL(AV) = 85 W; VDS = 28 V; 1476 MHz < f < 1511 MHz; IDq = 2600 mA [0]-32-28dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF7G15LS-300P

(SOT539B)
sot539b_poReel 13" Q1/T1量产Standard MarkingBLF7G15LS-300P,118( 9340 646 35118 )
Bulk Pack量产Standard MarkingBLF7G15LS-300P,112( 9340 646 35112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D1drain1
2D2drain2
3G1gate1
4G2gate2
5Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF7G15LS-300PBLF7G15LS-300P,118Always Pb-freeNANA
BLF7G15LS-300PBLF7G15LS-300P,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF7G15LS-300P (中文)Power LDMOS transistorData sheetpdf2013-07-12
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF7G15L-300P_ADS-2009_ModelBLF7G15L-300P ADS-2009 ModelSimulation modelzip2013-02-28
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
订购信息
型号订购码 (12NC)可订购的器件编号
BLF7G15LS-300P9340 646 35118BLF7G15LS-300P,118
BLF7G15LS-300P9340 646 35112BLF7G15LS-300P,112
模型
标题类型日期
BLF7G15L-300P ADS-2009 ModelSimulation model2013-02-28
Power LDMOS transistor BLF7G15LS-300P
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
BLF7G15L-300P ADS-2009 Model BLF7G15LS-300P