恩智浦提供工作频率范围为400 MHz到3.8 GHz的全系列RF功率晶体管。
产品型号 | 描述 | 产品状态 |
---|---|---|
BLA6G1011(LS)-200R(G) | 功率LDMOS晶体管 | Production |
BLA6H0912-500 | LDMOS航空电子雷达功率晶体管 | Production |
BLA6H0912L(S)-1000 | LDMOS航空电子功率晶体管 | Production |
BLA6H1011-600 | LDMOS avionics power transistor | Production |
BLA8G1011L(S)-300(G) | Power LDMOS transistor | Production |
BLC2425M8LS300P | Power LDMOS transistor | Development |
BLC8G20LS-310AV | Power LDMOS transistor | Production |
BLC8G20LS-400AV | Power LDMOS transistor | Production |
BLC8G21LS-160AV | LDMOS功率晶体管 | Production |
BLC8G22LS-450AV | LDMOS功率晶体管 | Production |
BLC8G24LS-240AV | LDMOS功率晶体管 | Production |
BLC8G27LS-100AV | LDMOS功率晶体管 | Production |
BLC8G27LS-140AV | LDMOS功率晶体管 | Production |
BLC8G27LS-160AV | 功率LDMOS晶体管 | Production |
BLC8G27LS-180AV | LDMOS功率晶体管 | Production |
BLC8G27LS-210PV | LDMOS功率晶体管 | Production |
BLC8G27LS-240AV | 功率LDMOS晶体管 | Production |
BLC8G27LS-245AV | LDMOS功率晶体管 | Production |
BLC8G27LS-60AV | Power LDMOS transistor | Development |
BLC9G20LS-120V | Power LDMOS transistor | Development |
BLC9G27LS-150AV | LDMOS功率晶体管 | Production |
BLF10H6600P(S) | 功率LDMOS晶体管 | Production |
BLF10M6(LS)135 | 功率LDMOS晶体管 | Production |
BLF10M6(LS)160 | 功率LDMOS晶体管 | Production |
BLF10M6(LS)200 | 功率LDMOS晶体管 | Production |
BLF174XR(S) | 功率LDMOS晶体管 | Production |
BLF178P | 功率LDMOS晶体管 | Production |
BLF178XR(S) | 功率LDMOS晶体管 | Production |
BLF182XR(S) | Power LDMOS transistor | Development |
BLF183XR(S) | LDMOS功率晶体管 | Production |
BLF184XR(S) | 功率LDMOS晶体管 | Production |
BLF188XR(S) | 功率LDMOS晶体管 | Production |
BLF188XRG | 功率LDMOS晶体管 | Production |
BLF2324M8LS200P | LDMOS功率晶体管 | Production |
BLF2425M6L(S)180P | 功率LDMOS晶体管 | Production |
BLF2425M7L(S)100 | 功率LDMOS晶体管 | Production |
BLF2425M7L(S)140 | 功率LDMOS晶体管 | Production |
BLF2425M7L(S)250P | 功率LDMOS晶体管 | Production |
BLF2425M8L(S)140 | 功率LDMOS晶体管 | Production |
BLF2425M9L(S)30 | Power LDMOS transistor | Development |
BLF25M612(G) | Power LDMOS transistor | Production |
BLF571 | HF/VHF功率LDMOS晶体管 | Production |
BLF573(S) | HF/VHF功率LDMOS晶体管 | Production |
BLF574 | HF/VHF功率LDMOS晶体管 | Production |
BLF574XR(S) | 功率LDMOS晶体管 | Production |
BLF578 | 功率LDMOS晶体管 | Production |
BLF578XR(S) | 功率LDMOS晶体管 | Production |
BLF640 | 宽带功率LDMOS晶体管 | Production |
BLF642 | 宽带功率LDMOS晶体管 | Production |
BLF644P | 宽带功率LDMOS晶体管 | Production |
BLF645 | 宽带功率LDMOS晶体管 | Production |
BLF647P | 宽带功率LDMOS晶体管 | Production |
BLF647PS | 宽带功率LDMOS晶体管 | Production |
BLF6G10(LS)-200RN | 功率LDMOS晶体管 | Production |
BLF6G10-45 | 功率LDMOS晶体管 | Production |
BLF6G10L(S)-260PRN | 功率LDMOS晶体管 | Production |
BLF6G10L-40BRN | 功率LDMOS晶体管 | Production |
BLF6G10LS-135RN | 功率LDMOS晶体管 | Production |
BLF6G13L(S)-250P | 功率LDMOS晶体管 | Production |
BLF6G13LS-250PG | Power LDMOS transistor | Development |
BLF6G15L(S)-40RN | 功率LDMOS晶体管 | Production |
BLF6G15L(S)-500H | 功率LDMOS晶体管 | Production |
BLF6G15L-250PBRN | 功率LDMOS晶体管 | Production |
BLF6G15L-40BRN | 功率LDMOS晶体管 | Production |
BLF6G15LS-250PBRN | 功率LDMOS晶体管 | Production |
BLF6G20(LS)-110 | 功率LDMOS晶体管 | Production |
BLF6G20LS-140 | 功率LDMOS晶体管 | Production |
BLF6G21-10G | 功率LDMOS晶体管 | Production |
BLF6G22L(S)-40P | 功率LDMOS晶体管 | Production |
BLF6G22LS-100 | 功率LDMOS晶体管 | Production |
BLF6G22LS-130 | 功率LDMOS晶体管 | Production |
BLF6G27(S)-45 | WiMAX功率LDMOS晶体管 | Production |
BLF6G27-10(G) | WiMAX功率LDMOS晶体管 | Production |
BLF6G27L(S)-40P(G) | LDMOS功率晶体管 | Production |
BLF6G27L-50BN | 功率LDMOS晶体管 | Production |
BLF6G38(LS)-100 | WiMAX功率LDMOS晶体管 | Production |
BLF6G38(LS)-50 | WiMAX功率LDMOS晶体管 | Production |
BLF6G38(S)-25 | WiMAX功率LDMOS晶体管 | Production |
BLF6G38-10G | WiMAX功率LDMOS晶体管 | Production |
BLF6H10L(S)-160 | 功率LDMOS晶体管 | Production |
BLF7G10L(S)-250 | 功率LDMOS晶体管 | Production |
BLF7G15LS-200 | 功率LDMOS晶体管 | Production |
BLF7G15LS-300P | 功率LDMOS晶体管 | Production |
BLF7G20L(S)-200 | 功率LDMOS晶体管 | Production |
BLF7G20L(S)-250P | 功率LDMOS晶体管 | Production |
BLF7G20L(S)-90P | 功率LDMOS晶体管 | Production |
BLF7G20LS-140P | 功率LDMOS晶体管 | Production |
BLF7G21L(S)-160P | LDMOS功率晶体管 | Production |
BLF7G21LS-160 | LDMOS功率晶体管 | Production |
BLF7G22L(S)-130 | 功率LDMOS晶体管 | Production |
BLF7G22L(S)-160 | 功率LDMOS晶体管 | Production |
BLF7G22L(S)-200 | LDMOS功率晶体管 | Production |
BLF7G22L(S)-250P | LDMOS功率晶体管 | Production |
BLF7G24L(S)-100 | 功率LDMOS晶体管 | Production |
BLF7G24L(S)-140 | 功率LDMOS晶体管 | Production |
BLF7G24L(S)-160P | 功率LDMOS晶体管 | Production |
BLF7G27L(S)-100 | LDMOS功率晶体管 | Production |
BLF7G27L(S)-140 | 功率LDMOS晶体管 | Production |
BLF7G27L(S)-150P | 功率LDMOS晶体管 | Production |
BLF7G27L(S)-75P | 功率LDMOS晶体管 | Production |
BLF7G27L(S)-90P | 功率LDMOS晶体管 | Production |
BLF7G27L-200PB | 功率LDMOS晶体管 | Production |
BLF871(S) | 超高频LDMOS功率晶体管 | Production |
BLF879P(S) | UHF功率LDMOS晶体管 | Production |
BLF881(S) | UHF功率LDMOS晶体管 | Production |
BLF882(S) | 超高频LDMOS功率晶体管 | Production |
BLF884P(S) | UHF功率LDMOS晶体管 | Production |
BLF888A(S) | UHF功率LDMOS晶体管 | Production |
BLF888B(S) | UHF功率LDMOS晶体管 | Production |
BLF888D(S) | UHF功率LDMOS晶体管 | Production |
BLF8G09LS-270(G)W | 功率LDMOS晶体管 | Production |
BLF8G09LS-400P(G)W | 功率LDMOS晶体管 | Production |
BLF8G10L(S)-160 | 功率LDMOS晶体管 | Production |
BLF8G10LS-160V | 功率LDMOS晶体管 | Production |
BLF8G10LS-270 | 功率LDMOS晶体管 | Production |
BLF8G10LS-270(G)V | 功率LDMOS晶体管 | Production |
BLF8G10LS-300P | 功率LDMOS晶体管 | Production |
BLF8G19LS-170BV | 功率LDMOS晶体管 | Production |
BLF8G20LS-140(G)V | Power LDMOS transistor | Production |
BLF8G20LS-160V | Power LDMOS transistor | Production |
BLF8G20LS-200V | 功率LDMOS晶体管 | Production |
BLF8G20LS-220 | 功率LDMOS晶体管 | Production |
BLF8G20LS-230V | 功率LDMOS晶体管 | Production |
BLF8G20LS-260A | 功率LDMOS晶体管 | Production |
BLF8G20LS-400P(G)V | 功率LDMOS晶体管 | Production |
BLF8G22LS-140 | 功率LDMOS晶体管 | Production |
BLF8G22LS-160BV | 功率LDMOS晶体管 | Production |
BLF8G22LS-200(G)V | 功率LDMOS晶体管 | Production |
BLF8G22LS-205V | Power LDMOS transistor | Qualification |
BLF8G22LS-220 | 功率LDMOS晶体管 | Production |
BLF8G22LS-240 | 功率LDMOS晶体管 | Production |
BLF8G22LS-270 | 功率LDMOS晶体管 | Production |
BLF8G22LS-270(G)V | 功率LDMOS晶体管 | Production |
BLF8G24L(S)-200P | 功率LDMOS晶体管 | Production |
BLF8G24LS-100(G)V | 功率LDMOS晶体管 | Production |
BLF8G24LS-150(G)V | 功率LDMOS晶体管 | Production |
BLF8G24LS-200PN | LDMOS功率晶体管 | Production |
BLF8G27LS-100 | LDMOS功率晶体管 | Production |
BLF8G27LS-100(G)V | 功率LDMOS晶体管 | Production |
BLF8G27LS-100P | 功率LDMOS晶体管 | Production |
BLF8G27LS-140 | 功率LDMOS晶体管 | Production |
BLF8G27LS-140V | 功率LDMOS晶体管 | Production |
BLF8G27LS-150(G)V | 功率LDMOS晶体管 | Production |
BLF8G38LS-75V | 功率LDMOS晶体管 | Production |
BLF988(S) | 功率LDMOS晶体管 | Production |
BLF9G20LS-160V | Power LDMOS transistor | Production |
BLF9G38LS-90P | Power LDMOS transistor | Production |
BLL6H0514-25 | LDMOS驱动器晶体管 | Production |
BLL6H0514L(S)-130 | LDMOS驱动器晶体管 | Production |
BLL6H1214(LS)-500 | LDMOS L波段雷达功率晶体管 | Production |
BLL6H1214L(S)-250 | LDMOS L波段雷达功率晶体管 | Production |
BLL6H1214P2S-250 | LDMOS L-band radar power module | Production |
BLL8H0514-25 | Power LDMOS transistor | Production |
BLL8H0514L(S)-130 | LDMOS driver transistor | Production |
BLL8H1214L(S)-250 | LDMOS L-band radar power transistor | Production |
BLL8H1214L(S)-500 | LDMOS L-band radar power transistor | Production |
BLM2425M7S60P | LDMOS 2-stage power MMIC | Development |
BLM6G22-30(G) | W-CDMA 2100 MHz至2200 MHz功率MMIC | Production |
BLM7G1822S-20PB(G) | LDMOS 2级功率MMIC | Production |
BLM7G1822S-40AB(G) | LDMOS 2-stage power MMIC | Production |
BLM7G1822S-40PB(G) | LDMOS 2级功率MMIC | Production |
BLM7G1822S-80AB(G) | LDMOS 2级功率MMIC | Production |
BLM7G22S-60PB(G) | LDMOS 2级功率MMIC | Production |
BLM7G24S-30BG | LDMOS 2级功率MMIC | Production |
BLM8G0710S-15PB(G) | LDMOS 2-stage power MMIC | Qualification |
BLM8G0710S-30PB(G) | LDMOS 2-stage power MMIC | Production |
BLM8G0710S-45AB | LDMOS 2-stage power MMIC | Development |
BLM8G0710S-45ABG | LDMOS 2-stage power MMIC | Development |
BLP05H6110XR | Power LDMOS transistor | Qualification |
BLP05H6150XR | Power LDMOS transistor | Qualification |
BLP05H6200XR | Power LDMOS transistor | Development |
BLP05H6350XR | Power LDMOS transistor | Qualification |
BLP05H635XR | Power LDMOS transistor | Qualification |
BLP05H675XR | Power LDMOS transistor | Qualification |
BLP05M7200 | Power LDMOS transistor | Production |
BLP10H603 | 宽带LDMOS驱动器晶体管 | Production |
BLP10H605 | 宽带LDMOS驱动器晶体管 | Production |
BLP10H610 | 宽带LDMOS驱动器晶体管 | Production |
BLP15M7160P | 功率LDMOS晶体管 | Production |
BLP25M705 | 宽带LDMOS驱动晶体管 | Production |
BLP25M710 | 宽带LDMOS驱动晶体管 | Production |
BLP7G07S-140P | 功率LDMOS晶体管 | Production |
BLP7G22-05 | LDMOS驱动器晶体管 | Production |
BLP7G22-10 | LDMOS驱动器晶体管 | Production |
BLP8G10S-270PW | Power LDMOS transistor | Development |
BLP8G10S-45P(G) | 功率LDMOS晶体管 | Production |
BLP8G20S-80P | LDMOS功率晶体管 | Production |
BLP8G21S-160PV | 功率LDMOS晶体管 | Production |
BLP8G27-10 | Power LDMOS transistor | Qualification |
BLP8G27-5 | Power LDMOS transistor | Qualification |
BLS6G2731(S)-120 | LDMOS S波段雷达功率晶体管 | Production |
BLS6G2731-6G | LDMOS S波段雷达功率晶体管 | Production |
BLS6G2731S-130 | LDMOS S频段雷达功率晶体管 | Production |
BLS6G2735L(S)-30 | S波段LDMOS晶体管 | Production |
BLS6G2933S-130 | LDMOS S频段雷达功率晶体管 | Production |
BLS6G3135(S)-120 | LDMOS S波段雷达功率晶体管 | Production |
BLS6G3135(S)-20 | LDMOS S波段雷达功率晶体管 | Production |
BLS7G2325L-105 | 功率LDMOS晶体管 | Production |
BLS7G2729L(S)-350P | LDMOS S频段雷达功率晶体管 | Production |
BLS7G2730L(S)-200P | LDMOS S频段雷达功率晶体管 | Production |
BLS7G2933S-150 | LDMOS S波段雷达功率晶体管 | Production |
BLS7G3135L(S)-350P | LDMOS S波段雷达功率晶体管 | Production |
BLS7G3135LS-200 | LDMOS S波段雷达功率晶体管 | Production |
BLS8G2731L(S)-400P | LDMOS S-band radar power transistor | Production |
BLU6H0410L(S)-600P | 功率LDMOS晶体管 | Production |
CLF1G0035(S)-100 | 宽带RF功率GaN HEMT | Production |
CLF1G0035(S)-100P | 宽带RF功率GaN HEMT | Development |
CLF1G0035(S)-50 | 宽带RF功率GaN HEMT | Production |
CLF1G0060(S)-10 | 宽带RF功率GaN HEMT | Development |
CLF1G0060(S)-30 | 宽带RF功率GaN HEMT | Development |