BLF7G21LS-160:LDMOS功率晶体管

160 W LDMOS功率晶体管,适合于1800 MHz至2050 MHz频率范围内的基站应用,并适合在1495 MHz至1511 MHz频率下工作。

特性和优势
    • 出色的耐用性
    • 高效
    • 低Rth,提供出色的热稳定性
    • 专为宽带操作而设计(1800 MHz到2050 MHz)
    • 输出电容更低,Doherty应用的性能更好
    • 专为低内存占用量设计,因此预失真性能极佳
    • 内部匹配,易于使用
    • 集成ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • RF功率放大器,适合于基站和
    • 多载波应用(频率范围为1800 MHz至2050 MHz)
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range18002050MHz
PL(1dB)nominal output power at 1 dB gain compression160W
Gppower gainPL(AV) = 45 W; VDS = 28 V1718dB
RLininput return lossPL(AV) = 45 W; VDS = 28 V; IDq = 1080 mA-15-8dB
ηDdrain efficiencyPL(AV) = 45 W; VDS = 28 V; 1930 MHz ≤ f ≤ 1990 MHz; IDq = 1080 mA3134%
ACPR5Madjacent channel power ratio (5 MHz)PL(AV) = 45 W; VDS = 28 V; 1930 MHz ≤ f ≤ 1990 MHz; IDq = 1080 mA-30-25dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF7G21LS-160
CDFM4
(SOT1121B)
sot1121b_poReel 13" Q1/T1量产Standard MarkingBLF7G21LS-160,118( 9340 663 01118 )
Bulk Pack量产Standard MarkingBLF7G21LS-160,112( 9340 663 01112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ddrain
3Ggate
4Ggate
5Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF7G21LS-160BLF7G21LS-160,118Always Pb-freeNANA
BLF7G21LS-160BLF7G21LS-160,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF7G21LS-160 (中文)Power LDMOS transistorData sheetpdf2012-04-20
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF7G21L-160P_7G21LS-160P_7G21LS-160_Data-sheetPCB Design BLF7G21L(S)-160(P) (Data sheet)Design supportzip2012-03-29
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot1121b_poearless flanged ceramic package; 4 leadsOutline drawingpdf2012-06-08
订购信息
型号订购码 (12NC)可订购的器件编号
BLF7G21LS-1609340 663 01118BLF7G21LS-160,118
BLF7G21LS-1609340 663 01112BLF7G21LS-160,112
其它
标题类型日期
PCB Design BLF7G21L(S)-160(P) (Data sheet)Design support2012-03-29
Power LDMOS transistor BLF7G21LS-160
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 4 leads BLF9G38LS-90P
PCB Design BLF7G21L(S)-160(P) (Data sheet) BLF7G21LS-160