BLS7G2933S-150:LDMOS S波段雷达功率晶体管

150 W LDMOS功率晶体管主要用于2.9 GHz至3.3 GHz范围的雷达应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 高度灵活的脉冲格式
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作(2.9 GHz至3.3 GHz)
    • 内部匹配以方便使用
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 2.9 GHz至3.3 GHz频率范围内的雷达应用
    • S波段功率放大器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range29003300MHz
PL(1dB)nominal output power at 1 dB gain compression150W
Gppower gainPL = 150 W; VDS = 32 V1113.5dB
RLininput return lossPL = 150 W; VDS = 32 V; IDq = 100 mA-10-5.5dB
ηDdrain efficiencyPL = 150 W; VDS = 32 V; 2900 MHz ≤ f ≤ 3300 MHz; IDq = 100 mA4447%
PL(1dB)output power at 1 dB gain compressionVDS = 32 V; 2900 MHz ≤ f ≤ 3300 MHz; IDq = 100 mA170W
PLoutput power150W
Pdroop(pulse)pulse droop powerPL = 150 W00.3dB
VDSdrain-source voltagePL = 150 W32V
trrise timePL = 150 W; VDS = 32 V2050ns
tffall timePL = 150 W; VDS = 32 V650ns
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLS7G2933S-150
CDFM2
(SOT922-1)
sot922-1_poBulk Pack量产Standard MarkingBLS7G2933S-150,112( 9340 645 78112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLS7G2933S-150BLS7G2933S-150,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLS7G2933S-150 (中文)LDMOS S-band radar power transistorData sheetpdf2011-02-23
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLS7G2933S-150_Data-sheetPCB Design BLS7G2933S-150 (Data sheet)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
Application_Measurement_Report_BLS7G2933S-150_2900-3300MHz_NA-1093Application Measurement Report BLS7G2933S-150 2900-3300 MHz NA-1093Reportpdf2015-06-23
BLS7G2933S-150_ADS-2009_ModelBLS7G2933S-150 ADS-2009 ModelSimulation modelzip2013-08-02
sot922-1_poCeramic earless flanged cavity package; 2 leadsOutline drawingpdf2005-11-21
订购信息
型号订购码 (12NC)可订购的器件编号
BLS7G2933S-1509340 645 78112BLS7G2933S-150,112
模型
标题类型日期
BLS7G2933S-150 ADS-2009 ModelSimulation model2013-08-02
其它
标题类型日期
PCB Design BLS7G2933S-150 (Data sheet)Design support2012-02-24
LDMOS S-band radar power transistor BLS7G2933S-150
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Application Measurement Report BLS7G2933S-150 2900-3300 MHz NA-1093 BLS7G2933S-150
Ceramic earless flanged cavity package; 2 leads BLS7G2933S-150
BLS7G2933S-150 ADS-2009 Model BLS7G2933S-150
PCB Design BLS7G2933S-150 (Data sheet) BLS7G2933S-150