恩智浦为设计人员提供高效的航空电子器件、可以匹配原有双极工艺技术的L频段/S频段LDMOS功率放大器,新产品在可靠性、耐用性、增益和效率方面得到了大幅提升。
产品型号 | 描述 | 产品状态 |
---|---|---|
BLA6G1011(LS)-200R(G) | 功率LDMOS晶体管 | Production |
BLA6H0912-500 | LDMOS航空电子雷达功率晶体管 | Production |
BLA6H0912L(S)-1000 | LDMOS航空电子功率晶体管 | Production |
BLA6H1011-600 | LDMOS avionics power transistor | Production |
BLA8G1011L(S)-300(G) | Power LDMOS transistor | Production |
BLF988(S) | 功率LDMOS晶体管 | Production |
BLL6H0514-25 | LDMOS驱动器晶体管 | Production |
BLL6H0514L(S)-130 | LDMOS驱动器晶体管 | Production |
BLL6H1214(LS)-500 | LDMOS L波段雷达功率晶体管 | Production |
BLL6H1214L(S)-250 | LDMOS L波段雷达功率晶体管 | Production |
BLL6H1214P2S-250 | LDMOS L-band radar power module | Production |
BLL8H0514-25 | Power LDMOS transistor | Production |
BLL8H0514L(S)-130 | LDMOS driver transistor | Production |
BLL8H1214L(S)-250 | LDMOS L-band radar power transistor | Production |
BLL8H1214L(S)-500 | LDMOS L-band radar power transistor | Production |
BLS6G2731(S)-120 | LDMOS S波段雷达功率晶体管 | Production |
BLS6G2731-6G | LDMOS S波段雷达功率晶体管 | Production |
BLS6G2731S-130 | LDMOS S频段雷达功率晶体管 | Production |
BLS6G2735L(S)-30 | S波段LDMOS晶体管 | Production |
BLS6G2933S-130 | LDMOS S频段雷达功率晶体管 | Production |
BLS6G3135(S)-120 | LDMOS S波段雷达功率晶体管 | Production |
BLS6G3135(S)-20 | LDMOS S波段雷达功率晶体管 | Production |
BLS7G2325L-105 | 功率LDMOS晶体管 | Production |
BLS7G2729L(S)-350P | LDMOS S频段雷达功率晶体管 | Production |
BLS7G2730L(S)-200P | LDMOS S频段雷达功率晶体管 | Production |
BLS7G2933S-150 | LDMOS S波段雷达功率晶体管 | Production |
BLS7G3135L(S)-350P | LDMOS S波段雷达功率晶体管 | Production |
BLS7G3135LS-200 | LDMOS S波段雷达功率晶体管 | Production |
BLS8G2731L(S)-400P | LDMOS S-band radar power transistor | Production |
BLU6H0410L(S)-600P | 功率LDMOS晶体管 | Production |