BLS7G2325L-105:功率LDMOS晶体管

105 W LDMOS功率晶体管,用于2300 MHz至2500 MHz频率范围的S波段雷达应用

特性和优势
    • 极佳的强度
    • 集成ESD保护
    • 高效率
    • 低Rth提供极佳的热稳定性
    • 内部匹配以方便使用
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 适用于S波段雷达应用(2300 MHz至2500 MHz)的RF功率放大器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range23002500MHz
PL(1dB)nominal output power at 1 dB gain compression105W
Gppower gainVDS = 30 V16.5dB
ηDdrain efficiencyVDS = 30 V; 2300 MHz ≤ f ≤ 2500 MHz; IDq = 900 mA55%
PL(AV)average output power110W
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLS7G2325L-105

(SOT502A)
sot502a_poBulk Pack量产Standard MarkingBLS7G2325L-105,112( 9340 653 24112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLS7G2325L-105BLS7G2325L-105,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLS7G2325L-105 (中文)Power LDMOS transistorData sheetpdf2011-07-19
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot502a_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2009-10-08
SOT502A_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
订购信息
型号订购码 (12NC)可订购的器件编号
BLS7G2325L-1059340 653 24112BLS7G2325L-105,112
Power LDMOS transistor BLS7G2325L-105
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105