BLS6G2731-6G：LDMOS S波段雷达功率晶体管
6 W LDMOS功率晶体管主要用于2.7 GHz至3.1 GHz范围的雷达应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2700 | 3100 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 6 | W | |||
| Gp | power gain | PL = 6 W; VDS = 32 V | 14 | 15 | dB | |
| ηD | drain efficiency | PL = 6 W; VDS = 32 V; 2700 MHz ≤ f ≤ 3100 MHz; IDq = 25 mA | 30 | 33 | % | |
| VDS | drain-source voltage | PL = 6 W | 32 | V | ||
| tr | rise time | PL = 6 W; VDS = 32 V | 20 | 50 | ns | |
| tf | fall time | PL = 6 W; VDS = 32 V | 10 | 50 | ns |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLS6G2731-6G |  CDFM2 (SOT975C) | sot975c_po | Bulk Pack | 量产 | Standard Marking | BLS6G2731-6G,112( 9340 617 49112 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D | drain |  |  |
| 2 | G | gate | ||
| 3 | S | source |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLS6G2731-6G | BLS6G2731-6G,112 |   | Always Pb-free | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLS6G2731-6G (中文) | LDMOS S-Band radar power transistor | Data sheet | 2014-12-16 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| PCB_Design_BLS6G2731-6G_Data-sheet | PCB Design BLS6G2731-6G (Data sheet) | Design support | zip | 2012-02-24 |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| RFPower_Longevity_Overview | RF Power Longevity Overview | Other type | 2014-09-09 | |
| Application_Measurement_Report_BLS6G2731-6G_2700-3100MHz_NA-1598 | Application Measurement Report BLS6G2731-6G 2700-3100 MHz NA-1598 | Report | 2015-06-23 | |
| BLS6G2731-6G_ADS-2009_Model | BLS6G2731-6G ADS-2009 Model | Simulation model | zip | 2013-02-28 |
| sot975c_po | earless flanged ceramic package; 2 leads | Outline drawing | 2008-07-09 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLS6G2731-6G | 9340 617 49112 | BLS6G2731-6G,112 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLS6G2731-6G ADS-2009 Model | Simulation model | 2013-02-28 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLS6G2731-6G (Data sheet) | Design support | 2012-02-24 |
- LDMOS S-Band radar power transistor BLS6G2731-6G
- Mounting and Soldering of RF transistors aerospace_defense
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- RF Power Longevity Overview gan_devices
- Application Measurement Report BLS6G2731-6G 2700-3100 MHz NA-1598 BLS6G2731-6G
- earless flanged ceramic package; 2 leads BLS6G2731-6G
- BLS6G2731-6G ADS-2009 Model BLS6G2731-6G
- PCB Design BLS6G2731-6G (Data sheet) BLS6G2731-6G
