BLC8G27LS-245AV:LDMOS功率晶体管

240 W LDMOS封装非对称Doherty功率晶体管,适用于2500 MHz至2700 MHz频率范围内的基站应用。

特性和优势
    • 出色的耐用性
    • 高效
    • 低热阻,提供极佳的热稳定性
    • 专为宽带应用设计(2500 MHz至2700 MHz)
    • 非对称设计以获得整个频段的最佳效率
    • 更低的输出电容提升了Doherty应用的性能
    • 专为低内存占用量设计,提供极佳的数字预失真性能
    • 内部匹配,便于使用
    • 集成ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • RF功率放大器,适合于2500 MHz至2700 MHz频率范围内的基站和多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range25002700MHz
PL(1dB)nominal output power at 1 dB gain compression240W
Gppower gainPL(AV) = 56 W; VDS = 28 V12.814dB
RLininput return lossPL(AV) = 56 W; VDS = 28 V; IDq = 500 mA-10-6dB
ηDdrain efficiencyPL(AV) = 56 W; VDS = 28 V; 2500 MHz < f < 2690 MHz; IDq = 500 mA3237%
ACPRadjacent channel power ratioPL(AV) = 56 W; VDS = 28 V; 2500 MHz < f < 2690 MHz; IDq = 500 mA-25-20dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLC8G27LS-245AV
DFM8
(SOT1251-2)
sot1251-2_poTray, NonBakeable, Multiple in Drypack量产Standard MarkingBLC8G27LS-245AVZ( 9340 682 16517 )
Reel 13" Q1/T1 in Drypack量产Standard MarkingBLC8G27LS-245AVY( 9340 682 16518 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D2Pdrain2 (peak)
2D1Mdrain1 (main)
3G1Mgate1 (main)
4G2Pgate2 (peak)
5Ssource
6VDMvideo decoupling (main)
7n.c.not connected
8n.c.not connected
9VDPvideo decoupling (peak)
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLC8G27LS-245AVBLC8G27LS-245AVZAlways Pb-free33
BLC8G27LS-245AVBLC8G27LS-245AVYAlways Pb-free33
文档资料
档案名称标题类型格式日期
BLC8G27LS-245AV (中文)Power LDMOS transistorData sheetpdf2014-12-16
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLC8G27LS-245AV_Data-sheetPCB Design BLC8G27LS-245AV (Data sheet)Design supportzip2014-12-18
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLC8G27LS-245AV_ADS-2009_ModelBLC8G27LS-245AV ADS-2009 ModelSimulation modelzip2014-12-18
SOT1251-2_518Air cavity plastic earless flanged package; 8 leads Reel dry pack, SMD, 13" Q4/T2 standard product orientation Orderable part number ending ,518 or Y Ordering code (12NC) ending 518Packingpdf2015-07-21
sot1251-2_poAir cavity plastic earless flanged package; 8 leadsOutline drawingpdf2014-07-01
订购信息
型号订购码 (12NC)可订购的器件编号
BLC8G27LS-245AV9340 682 16517BLC8G27LS-245AVZ
BLC8G27LS-245AV9340 682 16518BLC8G27LS-245AVY
模型
标题类型日期
BLC8G27LS-245AV ADS-2009 ModelSimulation model2014-12-18
其它
标题类型日期
PCB Design BLC8G27LS-245AV (Data sheet)Design support2014-12-18
Power LDMOS transistor BLC8G27LS-245AV
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Air cavity plastic earless flanged package; 8 leads Reel dry pack, SMD, 13" Q4/T2 standard product orientation Orderable part nu BLC8G27LS-245AV
Air cavity plastic earless flanged package; 8 leads BLC8G27LS-245AV
BLC8G27LS-245AV ADS-2009 Model BLC8G27LS-245AV
PCB Design BLC8G27LS-245AV (Data sheet) BLC8G27LS-245AV