BLC8G27LS-160AV：功率LDMOS晶体管
160 W LDMOS封装非对称Doherty功率晶体管，适合2496 MHz至2690 MHz频率范围的基站应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2496 | 2690 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 160 | W | |||
| Gp | power gain | PL(AV) = 31.6 W; VDS = 28 V | 13.3 | 14.3 | dB | |
| RLin | input return loss | PL(AV) = 31.6 W; VDS = 28 V; IDq = 250 mA | -13 | -6 | dB | |
| ηD | drain efficiency | PL(AV) = 31.6 W; VDS = 28 V; 2496 MHz < f < 2690 MHz; IDq = 250 mA | 36 | 41 | % | |
| PL(M) | peak output power | 146 | 170 | W | ||
| ACPR | adjacent channel power ratio | PL(AV) = 31.6 W; VDS = 28 V; 2496 MHz < f < 2690 MHz; IDq = 250 mA | -30 | -25 | dBc | |
| PARO | output peak-to-average ratio | PL(AV) = 63 W | 3.75 | 4.7 | dB |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC8G27LS-160AV |  DFM6 (SOT1275-1) | sot1275-1_po | Reel 13" Q1/T1 | 量产 | Standard Marking | BLC8G27LS-160AVJ( 9340 678 22118 ) | |
| Bulk Pack | 量产 | Standard Marking | BLC8G27LS-160AVU( 9340 678 22112 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D1 | drain1 (main) |  |  |
| 2 | D2 | drain2 (peak) | ||
| 3 | G1 | gate1 (main) | ||
| 4 | G2 | gate2 (peak) | ||
| 5 | VDM | video decoupling (main) | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | S | source |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLC8G27LS-160AV | BLC8G27LS-160AVJ |   | Always Pb-free | 3 | 3 |
| BLC8G27LS-160AV | BLC8G27LS-160AVU | | Always Pb-free | 3 | 3 |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLC8G27LS-160AV (中文) | Power LDMOS transistor | Data sheet | 2014-06-03 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| 75017347 | Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| PCB_Design_BLC8G27LS-160AV_Data-sheet | PCB Design BLC8G27LS-160AV (Data sheet) | Design support | zip | 2014-04-10 |
| 75017604 | Gen8: the latest LDMOS RF power portfolio for wireless infrastructures | Leaflet | 2014-09-04 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| Factsheet_Gen8_LDMOS_RF_pt_with_VBW | Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth | Other type | 2012-10-23 | |
| Factsheet_Biasing_Asymmetrical_Doherty_RF_power_transistor | Factsheet Biasing Asymmetrical Doherty RF power transistor | Other type | 2013-03-28 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| BLC8G27LS-160AV_ADS-2009_Model | BLC8G27LS-160AV ADS-2009 Model | Simulation model | zip | 2013-11-22 |
| sot1275-1_po | plastic earless flanged cavity package; 6 leads | Outline drawing | 2013-04-23 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLC8G27LS-160AV | 9340 678 22118 | BLC8G27LS-160AVJ |
| BLC8G27LS-160AV | 9340 678 22112 | BLC8G27LS-160AVU |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLC8G27LS-160AV ADS-2009 Model | Simulation model | 2013-11-22 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLC8G27LS-160AV (Data sheet) | Design support | 2014-04-10 |
- Power LDMOS transistor BLC8G27LS-160AV
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
- Fatigue in aluminum bond wires gan_devices
- Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
- Factsheet Biasing Asymmetrical Doherty RF power transistor BLF8G20LS-260A
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- plastic earless flanged cavity package; 6 leads BLC9G27LS-150AV
- BLC8G27LS-160AV ADS-2009 Model BLC8G27LS-160AV
- PCB Design BLC8G27LS-160AV (Data sheet) BLC8G27LS-160AV
