BLF2425M7L(S)100：功率LDMOS晶体管

100 W LDMOS功率晶体管，适合2300 MHz至2400 MHz频率的工业应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth，提供极佳的热稳定性
    • 针对低内存占用量设计，提供出色的数字预失真性能
    • 内部匹配，便于使用
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适合2300 MHz至2400 MHz频率范围内工业和多载波应用的RF功率放大器
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF2425M7L100SOT502A230024001002827181-c WCDMA; 1-c WCDMAProduction
BLF2425M7LS100SOT502B230024001002827181-c WCDMA; 1-c WCDMAProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF2425M7L100

(SOT502A)		sot502a_poReel 13" Q1/T1量产Standard MarkingBLF2425M7L100J( 9340 678 99118 )
Bulk Pack量产Standard MarkingBLF2425M7L100U( 9340 678 99112 )
BLF2425M7LS100

(SOT502B)		sot502b_poReel 13" Q1/T1量产Standard MarkingBLF2425M7LS100J( 9340 679 01118 )
Bulk Pack量产Standard MarkingBLF2425M7LS100U( 9340 679 01112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF2425M7L100BLF2425M7L100JAlways Pb-freeNA
BLF2425M7L100BLF2425M7L100UAlways Pb-freeNA
BLF2425M7LS100BLF2425M7LS100JAlways Pb-freeNA
BLF2425M7LS100BLF2425M7LS100UAlways Pb-freeNA
文档资料
档案名称标题类型格式日期
BLF2425M7L100_2425M7LS100 (中文)Power LDMOS transistorData sheetpdf2014-06-24
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot502a_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2009-10-08
SOT502A_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
SOT502A_135Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF2425M7L1009340 678 99118BLF2425M7L100J
BLF2425M7L1009340 678 99112BLF2425M7L100U
BLF2425M7LS1009340 679 01118BLF2425M7LS100J
BLF2425M7LS1009340 679 01112BLF2425M7LS100U
Power LDMOS transistor BLF2425M7L_S_100
Power LDMOS transistor BLF2425M7L_S_100
Power LDMOS transistor BLF2425M7L_S_100
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105
Tape reel SMD; standard product orientation 12NC ending 135 BLS6G3135_S_120
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