BLF8G22LS-240：功率LDMOS晶体管

240 W LDMOS功率晶体管，适合2110 MHz至2170 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth，提供极佳的热稳定性
    • 设计用于宽带操作
    • 更低的输出电容，可增强Doherty应用中的性能
    • 针对低内存占用量设计，提供出色的预失真性能
    • 内部匹配，便于使用
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适用于基站的RF功率放大器
    • 2110 MHz至2170 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range21102170MHz
PL(1dB)nominal output power at 1 dB gain compression240W
Gppower gainPL(AV) = 55 W; VDS = 28 V1819dB
RLininput return lossPL(AV) = 55 W; VDS = 28 V; IDq = 2000 mA-17-6dB
ηDdrain efficiencyPL(AV) = 55 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 2000 mA2328.5%
ACPR5Madjacent channel power ratio (5 MHz)PL(AV) = 55 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 2000 mA-30-25dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G22LS-240

(SOT502B)		sot502b_poReel 13" Q1/T1量产Standard MarkingBLF8G22LS-240J( 9340 675 25118 )
Bulk Pack量产Standard MarkingBLF8G22LS-240U( 9340 675 25112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G22LS-240BLF8G22LS-240JAlways Pb-free
BLF8G22LS-240BLF8G22LS-240UAlways Pb-free
文档资料
档案名称标题类型格式日期
BLF8G22LS-240 (中文)Power LDMOS transistorData sheetpdf2013-03-07
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G22LS-240_Data-sheetPCB Design BLF8G22LS-240 (Data sheet)Design supportzip2013-02-21
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
BLF8G22LS-240_ADS-2009_ModelBLF8G22LS-240 ADS-2009 ModelSimulation modelzip2013-08-01
BLF8G22LS-240_ADS-2012_ModelBLF8G22LS-240 ADS-2012 ModelSimulation modelzip2014-05-02
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G22LS-2409340 675 25118BLF8G22LS-240J
BLF8G22LS-2409340 675 25112BLF8G22LS-240U
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
BLF8G22LS-240 ADS-2009 ModelSimulation model2013-08-01
BLF8G22LS-240 ADS-2012 ModelSimulation model2014-05-02
其它
标题类型日期
PCB Design BLF8G22LS-240 (Data sheet)Design support2013-02-21
Power LDMOS transistor BLF8G22LS-240
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF8G22LS-240 ADS-2009 Model BLF8G22LS-240
BLF8G22LS-240 ADS-2012 Model BLF8G22LS-240
PCB Design BLF8G22LS-240 (Data sheet) BLF8G22LS-240
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