BLF8G20LS-400P(G)V:功率LDMOS晶体管

400 W LDMOS功率晶体管,具有改进的视频带宽,适合1805 MHz至1995 MHz频率范围的基站应用。

特性和优势
    • 去耦引线,可改进视频带宽(VBW)(典型值:120 MHz)
    • 高效率
    • 低Rth,提供极佳的热稳定性
    • 设计用于宽带操作
    • 更低的输出电容,可增强Doherty应用中的性能
    • 针对低内存占用量设计,提供出色的预失真性能
    • 内部匹配,便于使用
    • 集成式ESD保护
    • 最适合鸥翼式的设计
    • 出色的耐用性
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适合1805 MHz至1995 MHz频率范围内基站和多载波应用的RF功率放大器
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF8G20LS-400PGVSOT1242C180519954002828192-c WCDMA; 2-c WCDMAProduction
BLF8G20LS-400PVSOT1242B180519954002828192-c WCDMA; 2-c WCDMAProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G20LS-400PGV
CDFM8
(SOT1242C)
sot1242c_poHorizontal, Rail Pack量产Standard MarkingBLF8G20LS-400PGVQ( 9340 678 02127 )
Reel 13" Q1/T1量产Standard MarkingBLF8G20LS-400PGVJ( 9340 678 02118 )
BLF8G20LS-400PV
CDFM8
(SOT1242B)
sot1242b_poBulk Pack量产Standard MarkingBLF8G20LS-400PVU( 9340 678 03112 )
Reel 13" Q1/T1量产Standard MarkingBLF8G20LS-400PVJ( 9340 678 03118 )
停产信息
型号订购码 (12NC)最后一次购买日期最后一次交货日期替代产品
BLF8G20LS-400PV934067803127
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G20LS-400PGVBLF8G20LS-400PGVQAlways Pb-freeNA
BLF8G20LS-400PGVBLF8G20LS-400PGVJAlways Pb-freeNA
BLF8G20LS-400PVBLF8G20LS-400PVUAlways Pb-freeNA
BLF8G20LS-400PVBLF8G20LS-400PVJAlways Pb-freeNA
文档资料
档案名称标题类型格式日期
BLF8G20LS-400PV_LS-400PGV (中文)Power LDMOS transistorData sheetpdf2015-07-29
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G20LS-400PV_LS-400PGV_Data-sheetPCB Design BLF8G20LS-400P(G)V (Data sheet)Design supportzip2013-06-14
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G20LS-400PGV_ADS-2009_ModelBLF8G20LS-400PGV ADS-2009 ModelSimulation modelzip2013-08-06
sot1242b_poearless flanged ceramic package; 8 leadsOutline drawingpdf2012-05-15
sot1242c_poearless flanged ceramic package; 8 leadsOutline drawingpdf2012-05-16
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G20LS-400PGV9340 678 02127BLF8G20LS-400PGVQ
BLF8G20LS-400PGV9340 678 02118BLF8G20LS-400PGVJ
BLF8G20LS-400PV9340 678 03112BLF8G20LS-400PVU
BLF8G20LS-400PV9340 678 03118BLF8G20LS-400PVJ
模型
标题类型日期
BLF8G20LS-400PGV ADS-2009 ModelSimulation model2013-08-06
其它
标题类型日期
PCB Design BLF8G20LS-400P(G)V (Data sheet)Design support2013-06-14
Power LDMOS transistor BLF8G20LS_400P_G_V
Power LDMOS transistor BLF8G20LS_400P_G_V
Power LDMOS transistor BLF8G20LS_400P_G_V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 8 leads BLF8G20LS_400P_G_V
earless flanged ceramic package; 8 leads BLF8G20LS_400P_G_V
BLF8G20LS-400PGV ADS-2009 Model BLF8G20LS_400P_G_V
PCB Design BLF8G20LS-400P(G)V (Data sheet) BLF8G20LS_400P_G_V