BLM8G0710S-45ABG：LDMOS 2-stage power MMIC _ BDTIC 中国领先电子元器件代理商

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BLM8G0710S-45ABG：LDMOS 2-stage power MMIC

The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using NXP’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.

特性和优势

Designed for broadband operation (frequency 700 MHz to 1000 MHz)
High section-to-section isolation enabling multiple combinations
High Doherty efficiency thanks to 2 : 1 asymmetry
Integrated temperature compensated bias
Biasing of individual stages is externally accessible
Integrated ESD protection
Excellent thermal stability
High power gain
On-chip matching for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

应用

RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency range. Possible circuit topologies are the following:
- Asymmetric final stage in Doherty configuration
- Asymmetric driver for high power Doherty amplifier
Asymmetric final stage in Doherty configuration
Asymmetric driver for high power Doherty amplifier

产品图片

关键参数

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
f_range	frequency range		700		1000	MHz
P_L(1dB)	nominal output power at 1 dB gain compression			45		W
G_p	power gain	V_DS = 28 V; f = 957.5 MHz ^[0]		35.2		dB
G_p	power gain	V_DS = 28 V; f = 730.5 MHz ^[0]		36.5		dB
RL_in	input return loss	V_DS = 28 V; f = 957.5 MHz ^[0]		-20		dB
η_D	drain efficiency	V_DS = 28 V; f = 957.5 MHz ^[0]		24.5		%
η_D	drain efficiency	V_DS = 28 V; f = 730.5 MHz ^[0]		24.5		%
ACPR_5M	adjacent channel power ratio (5 MHz)	V_DS = 28 V; f = 957.5 MHz ^[0]		-40		dB
ACPR_5M	adjacent channel power ratio (5 MHz)	V_DS = 28 V; f = 730.5 MHz ^[0]		-40		dB
PAR_O	peak-to-average ratio output	f = 975.5 MHz ^[0]		8.3		dB
PAR_O	peak-to-average ratio output	f = 730.5 MHz ^[0]		8		dB
G_p	power gain	V_DS = 28 V; f = 957.5 MHz ^[0]		35		dB
G_p	power gain	V_DS = 28 V; f = 730.5 MHz ^[0]		35.7		dB
RL_in	input return loss	V_DS = 28 V; f = 730.5 MHz ^[0]		-16		dB
η_D	drain efficiency	V_DS = 28 V; f = 957.5 MHz ^[0]		27		%
η_D	drain efficiency	V_DS = 28 V; f = 730.5 MHz ^[0]		24		%
ACPR_5M	adjacent channel power ratio (5 MHz)	V_DS = 28 V; f = 957.5 MHz ^[0]		-39		dBc
ACPR_5M	adjacent channel power ratio (5 MHz)	V_DS = 28 V; f = 730.5 Hz ^[0]		-41.5		dBc
PAR_O	output peak-to-average ratio	f = 957.5 MHz ^[0]		8		dB
PAR_O	output peak-to-average ratio	f = 730.5 MHz ^[0]		8		dB

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
BLM8G0710S-45ABG	HSOP16 (SOT1212-1)	sot1212-1_po		Reel 13" Q1/T1 in Drypack	开发中	Standard Marking	BLM8G0710S-45ABGY( 9340 690 33518 )

引脚配置信息

Pin	Symbol	Description
1	VDS(A1)	drain-source voltage of carrier section, driver stage (A1)
2	VGS(A2)	gate-source voltage of carrier section, final stage (A2)
3	VGS(A1)	gate-source voltage of carrier section, driver stage (A1)
4	RF_IN_A	RF input carrier section (A)
5	n.c.	not connected
6	n.c.	not connected
7	n.c.	not connected
8	n.c.	not connected
9	n.c.	not connected
10	n.c.	not connected
11	RF_IN_B	RF input peaking section (B)
12	VGS(B1)	gate-source voltage of peaking section, driver stage (B1)
13	VGS(B2)	gate-source voltage of peaking section, final stage (B2)
14	VDS(B1)	drain-source voltage of peaking section, driver stage (B1)
15	RF_OUT_B/VDS(B2)	RF output peaking section (B) / drain-source voltage of peaking section, final stage (B2)
16	RF_OUT_A/VDS(A2)	RF output carrier section (A) / drain-source voltage of carrier section, final stage (A2)
flange	GND	RF ground

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
BLM8G0710S-45ABG	BLM8G0710S-45ABGY			3	3

文档资料

档案名称	标题	类型	格式	日期
AN11183	Mounting and soldering of RF transistors in over-molded plastic packages	Application note	pdf	2012-11-06
75017347	Enabling the Mobile Experience	Brochure	pdf	2013-02-05
75017604	Gen8: the latest LDMOS RF power portfolio for wireless infrastructures	Leaflet	pdf	2014-09-04
fatigue_in_aluminum_bond_wires	Fatigue in aluminum bond wires	Mounting and soldering	pdf	2009-10-08
NXP_RF_manual_19th_edition	RF Manual 19th edition: Application and design manual for High Performance RF products May 2015	Other type	pdf	2015-05-19
sot1212-1_po	plastic, heatsink small outline package; 16 leads(flat)	Outline drawing	pdf	2012-04-17