BLF7G22L(S)-250P：LDMOS功率晶体管
250 W LDMOS功率晶体管，适用于2110 MHz至2170 MHz频率范围的基站应用。
特性和优势
应用
| 产品图片 |
关键参数
| 型号 | Package version | frange [min] (MHz) | frange [max] (MHz) | PL(1dB) (W) | VDS (V) | η (%) | GP (dB) | Test signal | Product status |
|---|---|---|---|---|---|---|---|---|---|
| BLF7G22LS-250P | SOT539B | 2110 | 2170 | 250 | 28 | 31 | 18.5 | 2-c WCDMA; 2-c WCDMA | Production |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF7G22LS-250P |  (SOT539B) | sot539b_po | Reel 13" Q1/T1 | 量产 | Standard Marking | BLF7G22LS-250P,118( 9340 646 91118 ) | |
| Bulk Pack | 量产 | Standard Marking | BLF7G22LS-250P,112( 9340 646 91112 ) |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF7G22LS-250P | BLF7G22LS-250P,118 |   | Always Pb-free | NA | NA |
| BLF7G22LS-250P | BLF7G22LS-250P,112 | | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF7G22L-250P_22LS-250P (中文) | Power LDMOS transistor | Data sheet | 2013-07-12 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| 75017347 | Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| BLF7G22-250P_ADS-2009_Model | BLF7G22-250P ADS-2009 Model | Simulation model | zip | 2013-02-28 |
| BLF7G22-250P_ADS-2011_Model | BLF7G22-250P ADS-2011 Model | Simulation model | zip | 2014-04-11 |
| sot539b_po | earless flanged balanced ceramic package; 4 leads | Outline drawing | 2012-05-08 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF7G22LS-250P | 9340 646 91118 | BLF7G22LS-250P,118 |
| BLF7G22LS-250P | 9340 646 91112 | BLF7G22LS-250P,112 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLF7G22-250P ADS-2009 Model | Simulation model | 2013-02-28 |
| BLF7G22-250P ADS-2011 Model | Simulation model | 2014-04-11 |
- Power LDMOS transistor BLF7G22L_S_250P
- Power LDMOS transistor BLF7G22L_S_250P
- Power LDMOS transistor BLF7G22L_S_250P
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
- BLF7G22-250P ADS-2009 Model BLF7G22L_S_250P
- BLF7G22-250P ADS-2011 Model BLF7G22L_S_250P
