BLF8G24L(S)-200P：功率LDMOS晶体管

200 W LDMOS功率晶体管，适用于2300 MHz至2400 MHz频率范围的基站应用。

特性和优势
    • 极佳的强度
    • 高效率
    • 低Rth提供极佳的热稳定性
    • 主要用于宽带操作（2300 MHz至2400 MHz）
    • 更低的输出电容提升了Doherty应用的性能
    • 主要用于降低记忆效应以提供极佳预失真能力
    • 内部匹配以方便使用
    • 集成ESD保护
    • 符合有害物质限制(RoHS) Directive 2002/95/EC
应用
    • 基站RF功率放大器
    • 2300 MHz 至2400 MHz频率范围内的多载波应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF8G24L-200PSOT539A23002400200283217.21-c WCDMA; 1-c WCDMAProduction
BLF8G24LS-200PSOT539B23002400200283217.21-c WCDMA; 1-c WCDMAProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G24L-200P

(SOT539A)		sot539a_poReel 13" Q1/T1量产Standard MarkingBLF8G24L-200P,118( 9340 663 02118 )
Bulk Pack量产Standard MarkingBLF8G24L-200P,112( 9340 663 02112 )
BLF8G24LS-200P

(SOT539B)		sot539b_poReel 13" Q1/T1量产Standard MarkingBLF8G24LS-200P,118( 9340 663 03118 )
Bulk Pack量产Standard MarkingBLF8G24LS-200P,112( 9340 663 03112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G24L-200PBLF8G24L-200P,118Always Pb-freeNANA
BLF8G24L-200PBLF8G24L-200P,112Always Pb-freeNANA
BLF8G24LS-200PBLF8G24LS-200P,118Always Pb-freeNANA
BLF8G24LS-200PBLF8G24LS-200P,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF8G24L-200P_LS-200P (中文)Power LDMOS transistorData sheetpdf2013-07-12
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G24L-200P_LS-200P_Data-sheetPCB Design BLF8G24L(S)-200P (Data sheet)Design supportzip2012-10-30
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G24LS-200P_ADS-2011_ModelBLF8G24LS-200P ADS-2011 ModelSimulation modelzip2013-08-01
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
sot539a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
SOT539A_135CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G24L-200P9340 663 02118BLF8G24L-200P,118
BLF8G24L-200P9340 663 02112BLF8G24L-200P,112
BLF8G24LS-200P9340 663 03118BLF8G24LS-200P,118
BLF8G24LS-200P9340 663 03112BLF8G24LS-200P,112
模型
标题类型日期
BLF8G24LS-200P ADS-2011 ModelSimulation model2013-08-01
其它
标题类型日期
PCB Design BLF8G24L(S)-200P (Data sheet)Design support2012-10-30
Power LDMOS transistor BLF8G24L_S_200P
Power LDMOS transistor BLF8G24L_S_200P
Power LDMOS transistor BLF8G24L_S_200P
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
BLF8G24LS-200P ADS-2011 Model BLF8G24L_S_200P
PCB Design BLF8G24L(S)-200P (Data sheet) BLF8G24L_S_200P
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