MMRF1011H: 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs

特性
  • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12% Power Gain: 18 dB Drain Efficiency: 60.5%
  • Capable of Handling 5:1 VSWR @ 50 Vdc, 1400 MHz, 300 W Peak Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
NI-780H-2L, NI-780S-2L Package Image
数据手册 (1)
名称/描述Modified Date
MMRF1011HR5, MMRF1011HSR5 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs - Data Sheet (REV 0) PDF (612.3 kB) MMRF1011H [English]24 Jul 2014
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C [English]22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]22 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF1011HSR5Active120014005055.2330330 @ PeakPulse18 @ 140060.50.13I/OABLDMOS
MMRF1011HR5Active120014005055.2330330 @ PeakPulse18 @ 140060.50.13I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-78098ASB15607CMPQ - 50 REELPOQ - 50 BOXActiveMMRF1011HR5MMRF1011HR5.pdf260
NI-780S98ASB16718CMPQ - 50 REELPOQ - 50 BOXActiveMMRF1011HSR5MMRF1011HSR5.pdf260
MMRF1011HR5, MMRF1011HSR5 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs - Data Sheet MMRF1011H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
MMRF1011HR5.pdf MMRF1011H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
MMRF1011HSR5.pdf MMRF1011H