MMRF1312H: 900-1215 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors _ BDTIC 中国领先电子元器件代理商

MMRF1312H: 900-1215 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors

特性

Internally input and output matched for broadband operation and ease of use
Device can be used in a single-ended, push-pull, or quadrature configuration
Qualified up to a maximum of 52 VDD operation
High ruggedness, handles > 20:1 VSWR
Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
Characterized with series equivalent large-signal impedance parameters
RoHS Compliant

特性

Air traffic control systems (ATC), including ground-based secondary radars such as IFF interrogators or transponders
Distance measuring equipment (DME)
Tactical air navigation (TACAN)

NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image

数据手册 (1)

名称/描述	Modified Date
MMRF1312H 900-1215 MHz, 1000 W Peak, 52 V Data Sheet (REV 0) PDF (432.9 kB) MMRF1312H [English]	25 Mar 2016

应用说明 (2)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages (REV 1) PDF (664.6 kB) AN1908 [English]	24 Feb 2011

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]	16 May 2016

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]	05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C [English]	23 Feb 2016

支持信息 (1)

名称/描述	Modified Date
RF Military High Power Avionics Devices (REV 0) PDF (726.5 kB) MILITARY_HIGH_POWER_RADAR_TRN_SI [English]	25 Mar 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MMRF1312HR5	Active		900	1215	52	60	1000	1200 @ Peak	Pulse	17.3 @ 960	54	0.017	I/O	AB	LDMOS
MMRF1312HSR5	Active		900	1215	52	60	1000	1200 @ Peak	Pulse	17.3 @ 960	54	0.017	I/O	AB	LDMOS
MMRF1312GSR5	Active		900	1215	52	60	1000	1200 @ Peak	Pulse	17.3 @ 960	54	0.017	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-1230-4S GULL	98ASA00459D	MPQ - 50 REELPOQ - 50 BOX	Active	MMRF1312GSR5	MMRF1312GSR5.pdf		260
NI-1230	98ASB16977C	MPQ - 50 REELPOQ - 50 REEL	Active	MMRF1312HR5	MMRF1312HR5.pdf		260
NI-1230S	98ARB18247C	MPQ - 50 REELPOQ - 50 BOX	Active	MMRF1312HSR5	MMRF1312HSR5.pdf		260

MMRF1312H 900-1215 MHz, 1000 W Peak, 52 V Data Sheet MMRF1312H

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages MMRF1317H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Aerospace and Defense Solutions Brochure MMRF5300N

RF Products Selector Guide MMT20303H

RF Military High Power Avionics Devices MMRF2010N

98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins mrfe6vp61k25h

MMRF1312GSR5.pdf MMRF1312H

98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MMRF1312HR5.pdf MMRF1312H

98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MMRF1312HSR5.pdf MMRF1312H

©1993 - 2024 BDTIC