MMRF1316N: 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor _ BDTIC 中国领先电子元器件代理商

MMRF1316N: 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor

特性

Wide Operating Frequency Range
Extreme Ruggedness
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated Stability Enhancements
Low Thermal Resistance
Integrated ESD Protection Circuitry
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

TO-270WB-4 Package Image

数据手册 (1)

名称/描述	Modified Date
MMRF1316NR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (969.0 kB) MMRF1316N [English]	25 Jul 2014

应用说明 (2)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Current - Application Notes (REV 0) PDF (90.5 kB) AN1643 [English]	31 Jan 1998

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]	16 May 2016

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (1)

名称/描述	Modified Date
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D [English]	18 Jan 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MMRF1316NR1	Active		1.8	600	50	54.8	300	300 @ CW	CW	25 @ 230	70	0.22	Unmatched	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-270 WB-4	98ASA10577D	MPQ - 500 REELPOQ - 500 REEL	Active	MMRF1316NR1	MMRF1316NR1.pdf		3	260

MMRF1316NR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet MMRF1316N

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Current - Application Notes MMRF1316N

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Aerospace and Defense Solutions Brochure MMRF5300N

RF Products Selector Guide MMT20303H

98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n

MMRF1316NR1.pdf MMRF1316N

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