MMRF2007N: 136-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

特性
  • Characterized with series equivalent large-signal impedance parameters and common source S-parameters
  • On-chip prematching. On-chip stabilization.
  • Integrated quiescent current temperature compensation with enable/disable function
  • Integrated ESD protection
  • RoHS compliant
TO-270WBL-16, TO-270WBLG-16 Package Images
数据手册 (1)
名称/描述Modified Date
136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet (REV 0) PDF (349.2 kB) MMRF2007N [English]19 Jun 2015
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]09 Oct 2003
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins (REV E) PDF (77.7 kB) 98ASA10739D [English]18 Mar 2016
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins (REV E) PDF (82.7 kB) 98ASA10740D [English]18 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF2007GNR1Active13694028497935 @ AVG2-Tone32.6 @ 94042.10.6I/OABLDMOS
MMRF2007NR1Active13694028497935 @ AVG2-Tone32.6 @ 94042.10.6I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-WBL 16 GULLWG PLS98ASA10740DMPQ - 500 REELPOQ - 500 REELActiveMMRF2007GNR1MMRF2007GNR1.pdf3260
TO-270 WBL 16 PLASTIC98ASA10739DMPQ - 500 REELPOQ - 500 REELActiveMMRF2007NR1MMRF2007NR1.pdf3260
Datasheet
136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet MMRF2007N
Other
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins MMRF2007N
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins MMRF2007N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
RF Aerospace and Defense Solutions Brochure MMRF5300N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
MMRF2007GNR1.pdf MMRF2007N
MMRF2007NR1.pdf MMRF2007N
RF Products Selector Guide MMT20303H