MMRF2007N: 136-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

特性
  • Characterized with series equivalent large-signal impedance parameters and common source S-parameters
  • On-chip prematching. On-chip stabilization.
  • Integrated quiescent current temperature compensation with enable/disable function
  • Integrated ESD protection
  • RoHS compliant
TO-270WBL-16, TO-270WBLG-16 Package Images
数据手册 (1)
名称/描述Modified Date
136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet (REV 0) PDF (349.2 kB) MMRF2007N [English]19 Jun 2015
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]09 Oct 2003
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins (REV E) PDF (77.7 kB) 98ASA10739D [English]18 Mar 2016
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins (REV E) PDF (82.7 kB) 98ASA10740D [English]18 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF2007GNR1Active13694028497935 @ AVG2-Tone32.6 @ 94042.10.6I/OABLDMOS
MMRF2007NR1Active13694028497935 @ AVG2-Tone32.6 @ 94042.10.6I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-WBL 16 GULLWG PLS98ASA10740DMPQ - 500 REELPOQ - 500 REELActiveMMRF2007GNR1MMRF2007GNR1.pdf3260
TO-270 WBL 16 PLASTIC98ASA10739DMPQ - 500 REELPOQ - 500 REELActiveMMRF2007NR1MMRF2007NR1.pdf3260
136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet MMRF2007N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins MMRF2007N
MMRF2007GNR1.pdf MMRF2007N
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins MMRF2007N
MMRF2007NR1.pdf MMRF2007N