MMRF5300N: 2700-3500 MHz, 60 W Peak, 50 V Wideband RF Power GaN on SiC Transistor

特性
  • 2700-3500 MHz operation
  • Plastic package enables improved thermal resistance
  • Advanced GaN on SiC, offering high power density
  • Input matched for extended wideband performance
  • High ruggedness: > 10:1 VSWR
  • RoHS Compliant
特性
  • Ideal for 2700-3500 MHz, military and civil S-Band radar pulsed applications
OM-270-2 Package Image
数据手册 (1)
名称/描述Modified Date
MMRF5300N 2700-3500 MHz, 60 W, 50 V GaN Data Sheet (REV 0) PDF (251.6 kB) MMRF5300N [English]26 May 2016
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA00814D, OMNI, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV O) PDF (88.3 kB) 98ASA00814D [English]04 Dec 2014
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF5300NR5Active270035005047.86060 @ PeakPulse17 @ 350061.50.52InputABGaN
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
OM-270-298ASA00814DMPQ - 50 REELPOQ - 50 BOXActiveMMRF5300NR5MMRF5300NR5.pdf3260
MMRF5300N 2700-3500 MHz, 60 W, 50 V GaN Data Sheet MMRF5300N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASA00814D, OMNI, 9.65x6.1x2.03, Pitch 6.06, 3 Pins MMRF5300N
MMRF5300NR5.pdf MMRF5300N