MRF6V2150N: 10-450 MHz，150 W，50 V单端宽带射频功率LDMOS

特性
  • 220MHz时的典型连续波性能：VDD = 50 V，IDQ = 450 mA，输出功率 = 150 W 功率增益：25 dB 漏极效率：68.3%
  • 在50 Vdc，220 MHz，150 W连续波输出功率时，能承受10:1 VSWR
  • 提供串联等效大信号阻抗参数
  • 工作电压最高可达50 VDD
  • 集成的ESD保护
  • 可耐225°C高温的塑料封装
  • 符合RoHS规范
  • 采用盘卷包装。R1后缀 = 500个，44 mm卷带宽度，13英寸卷盘。
TO-270WB-4, TO-272WB-4 Package Images
数据手册 (1)
名称/描述Modified Date
MRF6V2150NR1, MRF6V2150NBR1, 10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs (REV 4) PDF (1.5 MB) MRF6V2150N [English]28 Apr 2010
应用说明 (4)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]07 Jun 2006
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (2)
名称/描述Modified Date
Industrial, Scientific and Medical Solutions Brochure (REV 9) PDF (1.2 MB) BR1593 [English]03 Oct 2014
Broadcast Solutions (REV 5) PDF (818.6 kB) BR1607 [English]08 Sep 2011
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (2)
名称/描述Modified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP [English]24 Sep 2015
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]08 Sep 2011
封装信息 (2)
名称/描述Modified Date
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins (REV F) PDF (73.4 kB) 98ASA10575D [English]17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D [English]18 Jan 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF6V2150NR1Active104505051.8150150 @ CW1-Tone25 @ 22068.30.24UnmatchedABLDMOS
MRF6V2150NBR1Active104505051.8150150 @ CW1-Tone25 @ 22068.30.24UnmatchedABLDMOS
MRF6V2150NBR5Active104505051.8150150 @ CW1-Tone25 @ 22068.30.24UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-272 WB-498ASA10575DMPQ - 500 REELPOQ - 500 BOXActiveMRF6V2150NBR1MRF6V2150NBR1.pdf3260
MPQ - 50 REELPOQ - 50 BOXActiveMRF6V2150NBR5MRF6V2150NBR5.pdf3260
TO-270 WB-498ASA10577DMPQ - 500 REELPOQ - 500 BOXActiveMRF6V2150NR1MRF6V2150NR1.pdf3260
MRF6V2150NR1, MRF6V2150NBR1, 10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs mrf6v2150n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Industrial, Scientific and Medical Solutions Brochure mw7ic2425n
Broadcast Solutions mrfe6vp8600h
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins MMRF1018N
MRF6V2150NBR1.pdf MRF6V2150N
MRF6V2150NBR5.pdf MRF6V2150N
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n
MRF6V2150NR1.pdf MRF6V2150N
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