MRFE6VS25N: 1.8-2000 MHz,25 W,50 V LDMOS宽带射频功率晶体管

特性
  • 宽工作频率范围
  • 非常耐用
  • 未匹配,可支持非常宽的频段
  • 集成的稳定性增强功能
  • 低热阻
  • 扩展的ESD保护电路
  • 符合RoHS规范
  • 采用盘卷包装。R1后缀 = 500个,32 mm卷带宽度,13英寸卷盘。
TO-270-2, TO-270G-2 Gull Package Image
数据手册 (1)
名称/描述Modified Date
MRFE6VS25NR1, MRFE6VS25GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet (REV 1) PDF (1.7 MB) MRFE6VS25N [English]18 Dec 2012
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
简介 (1)
名称/描述Modified Date
RFWIDEBNDFS: 50V Rugged Wideband LDMOS Transistors – Fact Sheet (REV 0) PDF (337.4 kB) RFWIDEBNDFS [English]18 Jun 2012
手册 (1)
名称/描述Modified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 [English]04 Sep 2015
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP [English]24 Sep 2015
封装信息 (2)
名称/描述Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D [English]30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]26 Feb 2016
支持信息 (1)
名称/描述Modified Date
50V Rugged Wideband LDMOS Transistors (REV 0) PDF (778.4 kB) 50VWIDEBAND_TRN_SI [English]15 Jun 2012
印刷电路板
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRFE6VS25NR1Active1.8200050442525 @ CWCW25.5 @ 51274.51.2UnmatchedABLDMOS
MRFE6VS25GNR1Active1.8200050442525 @ CWCW25.5 @ 51274.71.2UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-2 GULL98ASA99301DMPQ - 500 REELPOQ - 500 REELActiveMRFE6VS25GNR1MRFE6VS25GNR1.pdf3260
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 REELActiveMRFE6VS25NR1MRFE6VS25NR1.pdf3260
Datasheet
MRFE6VS25NR1, MRFE6VS25GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet mrfe6vs25n
Other
50V Rugged Wideband LDMOS Transistors mrfe6vs25n
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
RF Solutions for Commercial Aerospace mrfe6vs25n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
MRFE6VS25GNR1.pdf MRFE6VS25N
MRFE6VS25N 1.8-30 MHz Broadband PCB DXF file MRFE6VS25N
MRFE6VS25N 1030 MHz Narrowband PCB DXF file MRFE6VS25N
MRFE6VS25N 30-512 MHz Broadband PCB DXF file MRFE6VS25N
MRFE6VS25N 512 MHz Narrowband PCB DXF file MRFE6VS25N
MRFE6VS25NR1.pdf MRFE6VS25N
Designing with Plastic RF Power Transistors White Paper mrf1570n
RFWIDEBNDFS: 50V Rugged Wideband LDMOS Transistors – Fact Sheet mrfe6vs25n
RF Products Selector Guide MMT20303H