MRF6V12250H: 960-1215 MHz，275 W，50 V脉冲射频功率LDMOS _ BDTIC 中国领先电子元器件代理商

MRF6V12250H: 960-1215 MHz，275 W，50 V脉冲射频功率LDMOS

特性

典型脉冲性能：VDD = 50 V，IDQ = 100 mA，输出功率 = 275 W峰值(27.5 W平均值)， f = 1030 MHz，脉冲宽度 = 128 µsec，占空比 = 10% 功率增益：20.3 dB漏极效率：65.5%
在50 Vdc，1030 MHz，275 W峰值功率时，能承受10:1 VSWR
典型宽带性能：VDD = 50 V，IDQ = 100 mA，输出功率 = 250 W峰值(25 W平均值)，f = 960–1215 MHz，脉冲宽度 = 128 µsec，占空比 = 10% 功率增益：19.8 dB漏极效率：58%
提供串联等效大信号阻抗参数
内部匹配，简便易用
工作电压最高可达50 VDD
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
符合RoHS规范
采用盘卷包装。R3后缀 = 250个，56 mm卷带宽度，13英寸卷盘
这些产品包含在恩智浦产品长期供货计划中，自推出后至少保证10年供货。

NI-780, NI-780S Package Image

数据手册 (1)

名称/描述	Modified Date
MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs (REV 2) PDF (1.3 MB) MRF6V12250H [English]	28 Apr 2010

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 [English]	04 Sep 2015

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

白皮书 (1)

名称/描述	Modified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]	08 Sep 2011

封装信息 (2)

名称/描述	Modified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C [English]	22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]	22 Mar 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF6V12250HR5	Active		960	1215	50	54.4	275	275 @ Peak	Pulse	20.3 @ 1030	65.5	0.08	I/O	AB	LDMOS
MRF6V12250HSR5	Active		960	1215	50	54.4	275	275 @ Peak	Pulse	20.3 @ 1030	65.5	0.08	I/O	AB	LDMOS
MRF6V12250HSR3	No Longer Manufactured		960	1215	50	54.4	275	275 @ Peak	Pulse	20.3 @ 1030	65.5	0.08	I/O	AB	LDMOS
MRF6V12250HR3	No Longer Manufactured		960	1215	50	54.4	275	275 @ Peak	Pulse	20.3 @ 1030	65.5	0.08	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-780	98ASB15607C	MPQ - 50 REELPOQ - 50 REEL	Active	MRF6V12250HR5	MRF6V12250HR5.pdf		260
NI-780	98ASB15607C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF6V12250HR3	MRF6V12250HR3.pdf		260
NI-780S	98ASB16718C	MPQ - 50 REELPOQ - 50 REEL	Active	MRF6V12250HSR5	MRF6V12250HSR5.pdf		260
NI-780S	98ASB16718C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF6V12250HSR3	MRF6V12250HSR3.pdf		260

MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs mrf6v12250h

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Solutions for Commercial Aerospace mrfe6vs25n

RF Products Selector Guide MMT20303H

50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H

MRF6V12250HR5.pdf MRF6V12250H

MRF6V12250HR3.pdf MRF6V12250H

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H

MRF6V12250HSR5.pdf MRF6V12250H

MRF6V12250HSR3.pdf MRF6V12250H

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