MRF6VP3450H: 860 MHz,450 W,50 V宽带射频功率LDMOS

特性
  • 典型DVB-T OFDM性能:VDD = 50 V,IDQ = 1400 mA,平均输出功率 = 90 W, f = 860 MHz,8K模式,64 QAM 功率增益:22.5 dB 漏极效率:28% 4 MHz偏移时的ACPR:–62 dBc @ 4 kH带宽
  • 典型宽带双频性能:VDD = 50 V,IDQ = 1400 mA,输出功率 = 450 W PEP,f = 470-860 MHz 功率增益:22 dB 漏极效率:44% IM3:–29 dBc
  • 在50 Vdc,860 MHz时,能承受10:1 VSWR,所有相角 450 W连续波 90 W平均值(DVB-T OFDM信号,10 dB PAR,7.61 MHz信道带宽)
  • 提供串联等效大信号阻抗参数
  • 内部匹配,简单易用
  • 工作电压最高可达50 VDD
  • 集成的ESD保护
  • 专为推挽操作而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 符合RoHS规范
  • 采用盘卷包装。R6后缀 = 150个,56 mm卷带宽度,13英寸卷盘。 R5后缀 = 50个,56 mm卷带宽度,13 英寸卷盘。
NI-1230H-4S, NI-1230S-4S Product Images
数据手册 (1)
名称/描述Modified Date
MRF6VP3450HR6, MRF6VP3450HR5, MRF6VP3450HSR6, MRF6VP3450HSR5 860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power... (REV 4) PDF (1.1 MB) MRF6VP3450H [English]28 Apr 2010
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
Broadcast Solutions (REV 5) PDF (818.6 kB) BR1607 [English]08 Sep 2011
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]08 Sep 2011
封装信息 (2)
名称/描述Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C [English]23 Feb 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF6VP3450HSR5Active4708605056.545090 @ AVGOFDM22.5 @ 860280.27InputABLDMOS
MRF6VP3450HR5Active4708605056.545090 @ AVGOFDM22.5 @ 860280.27InputABLDMOS
MRF6VP3450HR6Active4708605056.545090 @ AVGOFDM22.5 @ 860280.27InputABLDMOS
MRF6VP3450HSR6No Longer Manufactured4708605056.545090 @ AVGOFDM22.5 @ 860280.27InputABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-123098ASB16977CMPQ - 150 REELPOQ - 150 REELActiveMRF6VP3450HR6MRF6VP3450HR6.pdf260
MPQ - 50 REELPOQ - 50 BOXActiveMRF6VP3450HR5MRF6VP3450HR5.pdf260
NI-1230S98ARB18247CMPQ - 50 REELPOQ - 50 BOXActiveMRF6VP3450HSR5MRF6VP3450HSR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6VP3450HSR6MRF6VP3450HSR6.pdf260
MRF6VP3450HR6, MRF6VP3450HR5, MRF6VP3450HSR6, MRF6VP3450HSR5 860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power... mrf6vp3450h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Broadcast Solutions mrfe6vp8600h
RF Products Selector Guide MMT20303H
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF6VP3450HR6.pdf MRF6VP3450H
MRF6VP3450HR5.pdf MRF6VP3450H
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF6VP3450HSR5.pdf MRF6VP3450H
MRF6VP3450HSR6.pdf MRF6VP3450H