BC858BL: PNP Bipolar Transistor
The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
特性- Pb-Free Packages are Available
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
|
封装
数据表 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| SOT-23 | 318-08 (33.4kB) | AR |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| BC858BLT1G | Active | AEC Qualified
Pb-free
Halide free | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.0293 |
| BC858BLT3G | Active | AEC Qualified
Pb-free
Halide free | SOT-23-3 | 318-08 | 1 | Tape and Reel | 10000 | $0.0293 |
| NSVBC858BLT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.0323 |
| BC858BLT1 | Last Shipments | | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | |
| BC858BLT3 | Last Shipments | | SOT-23-3 | 318-08 | 1 | Tape and Reel | 10000 | |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| BC858BLT1G | PNP | General Purpose | 0.3 | 0.1 | 30 | 220 | 475 | 100 | 0.225 |
| BC858BLT3G | PNP | General Purpose | 0.3 | 0.1 | 30 | 220 | 475 | 100 | 0.225 |
| NSVBC858BLT1G | PNP | General Purpose | 0.3 | 0.1 | 30 | 220 | 475 | 100 | 0.225 |
