NGTB30N120L2: IGBT 1200V 30A FS2 Low VCEsat
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for motor driver applications. Incorporated into the device is a soft and
fast co−packaged free wheeling diode with a low forward voltage
特性- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for Low VCEsat
- 10 µs Short Circuit Capability
|
应用- Motor Drive Inverter
- Industrial Switching
- Welding
|
应用注释 (3)
数据表 (1)
参考手册 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB30N120L2WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $3.52 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB30N120L2WG | 1200 | 30 | 1.7 | 1.5 | 1.4 | 4.4 | 450 | 32 | 310 | 10 | | 534 | Yes |
