NGTB30N120L2: IGBT 1200V 30A FS2 Low VCEsat
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for motor driver applications. Incorporated into the device is a soft and
fast co−packaged free wheeling diode with a low forward voltage
Features- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for Low VCEsat
- 10 µs Short Circuit Capability
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Applications- Motor Drive Inverter
- Industrial Switching
- Welding
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Application Notes (3)
Data Sheets (1)
Reference Manuals (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTB30N120L2WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $3.52 |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB30N120L2WG | 1200 | 30 | 1.7 | 1.5 | 1.4 | 4.4 | 450 | 32 | 310 | 10 | | 534 | Yes |
