NGTB30N135IHR: IGBT 1350V 30A FS2-RC Induction Heating
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
特性- Extremely Efficient Trench with Fieldstop Technology
- Optimized for Low Case Temperature in IH Cooker Applications
- Reliable and Cost Effective Single Die Solution
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培训教材 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| 用于电磁炉应用的IGBT | TND6026CN/D (12435.3kB) | 0 | Aug, 2012 |
参考手册 (1)
应用注释 (4)
数据表 (1)
仿真模型 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB30N135IHRWG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $1.93 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB30N135IHRWG | 1350 | 30 | 2.3 | 2.1 | 0.85 | | | | 234 | | | 394 | Yes |
