NGTB30N135IHR: IGBT 1350V 30A FS2-RC Induction Heating
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
Features- Extremely Efficient Trench with Fieldstop Technology
- Optimized for Low Case Temperature in IH Cooker Applications
- Reliable and Cost Effective Single Die Solution
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Tutorials (1)
Reference Manuals (1)
Application Notes (4)
Data Sheets (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTB30N135IHRWG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $1.93 |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB30N135IHRWG | 1350 | 30 | 2.3 | 2.1 | 0.85 | | | | 234 | | | 394 | Yes |
