Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
特性
| 优势
|
应用
|
Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
PSpice Model | NSS40200LT1G.LIB (0.0kB) | 0 | |
Saber Model | NSS40200LT1G.SIN (1.0kB) | 0 | |
Spice2 Model | NSS40200LT1G.SP2 (0.0kB) | 0 | |
Spice3 Model | NSS40200LT1G.SP3 (0.0kB) | 0 |
Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT) | TND404/D (10341.0kB) | 0 | Aug, 2010 |
Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
Low VCE(sat) Transistor, PNP, -40 V, 4.0 A | NSS40200L/D (86kB) | 8 | Oct, 2016 |
Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
Simple Battery Charger using a CCR | AND9031/D (199kB) | 3 |
Document Title | Document ID/Size | Revision |
---|---|---|
SOT-23 | 318-08 (33.4kB) | AR |
Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
LOWVOLTAGEP2S Gerber Layout Files (Zip Format) | LOWVOLTAGEP2S_GERBER (102kB) | 0 | |
LOWVOLTAGEP2S Test Procedure | LOWVOLTAGEP2S_TEST_PROCEDURE (222kB) | 0 | |
LOWVOLTAGEP2SGEVB Bill of Materials (ROHS Compliant) | LOWVOLTAGEP2SGEVB_BOM_ROHS (26kB) | 1 | |
LOWVOLTAGEP2SGEVB Schematic | LOWVOLTAGEP2SGEVB_SCHEMATIC (100kB) | 0 |
产品 | 状况 | Compliance | 简短说明 |
---|---|---|---|
LOWVOLTAGEP2SGEVB | Active | Pb-free | Three LED Low Voltage Parallel-to-Series Lighting Circuit |
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
---|---|---|---|---|---|---|---|---|
NSS40200LT1G | Active | AEC Qualified Pb-free Halide free | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.12 |
NSV40200LT1G | Active | AEC Qualified PPAP Capable Pb-free Halide free | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.1481 |
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
---|---|---|---|---|---|---|---|---|---|
NSS40200LT1G | PNP | Low VCE(sat) | 0.095 | 2 | 40 | 250 | - | 100 | 0.71 |
NSV40200LT1G | PNP | Low VCE(sat) | 0.095 | 2 | 40 | 250 | - | 100 | 0.71 |